NE851M33
TYPICAL CHARACTERISTICS (TA =+25ºC, unless otherwise specified)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
1.0
250
200
f = 1 MHz
Mounted on Glass Epoxy PCB
(1.08 cm2 × 1.0 mm (t) )
0.8
0.6
0.4
0.2
150
130
100
50
0
25
50
75
100
125
150
0
2
4
6
8
10
Collector to Base Voltage VCB (V)
Ambient Temperature TA (ºC)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
100
10
1
100
10
1
VCE = 1 V
VCE = 2 V
0.1
0.1
0.01
0.001
0.01
0.001
0.0001
0.0001
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0.4
0.5
0.6
0.7
0.8
0.9
1.0
Base to Emitter Voltage VBE (V)
Base to Emitter Voltage VBE (V)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
60
400 A
µ
50
360
320
280
240
µ
A
µ
A
µ
40
30
20
A
µ
A
200
µ
A
160
µ
µ
A
A
120
80
µ
µ
A
A
10
0
IB = 40
6
1
2
3
4
5
7
Collector to Emitter Voltage VCE (V)
Remark The graphs indicate nominal characteristics.