欢迎访问ic37.com |
会员登录 免费注册
发布采购

NE851M33-T3-A 参数 Datasheet PDF下载

NE851M33-T3-A图片预览
型号: NE851M33-T3-A
PDF下载: 下载PDF文件 查看货源
内容描述: NEC的NPN硅晶体管 [NECs NPN SILICON TRANSISTOR]
分类和应用: 晶体晶体管
文件页数/大小: 6 页 / 348 K
品牌: CEL [ CALIFORNIA EASTERN LABS ]
 浏览型号NE851M33-T3-A的Datasheet PDF文件第1页浏览型号NE851M33-T3-A的Datasheet PDF文件第2页浏览型号NE851M33-T3-A的Datasheet PDF文件第4页浏览型号NE851M33-T3-A的Datasheet PDF文件第5页浏览型号NE851M33-T3-A的Datasheet PDF文件第6页  
NE851M33  
TYPICAL CHARACTERISTICS (TA =+25ºC, unless otherwise specified)  
TOTAL POWER DISSIPATION  
vs. AMBIENT TEMPERATURE  
REVERSE TRANSFER CAPACITANCE  
vs. COLLECTOR TO BASE VOLTAGE  
1.0  
250  
200  
f = 1 MHz  
Mounted on Glass Epoxy PCB  
(1.08 cm2 × 1.0 mm (t) )  
0.8  
0.6  
0.4  
0.2  
150  
130  
100  
50  
0
25  
50  
75  
100  
125  
150  
0
2
4
6
8
10  
Collector to Base Voltage VCB (V)  
Ambient Temperature TA (ºC)  
COLLECTOR CURRENT vs.  
BASE TO EMITTER VOLTAGE  
COLLECTOR CURRENT vs.  
BASE TO EMITTER VOLTAGE  
100  
10  
1
100  
10  
1
VCE = 1 V  
VCE = 2 V  
0.1  
0.1  
0.01  
0.001  
0.01  
0.001  
0.0001  
0.0001  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
Base to Emitter Voltage VBE (V)  
Base to Emitter Voltage VBE (V)  
COLLECTOR CURRENT vs.  
COLLECTOR TO EMITTER VOLTAGE  
60  
400 A  
µ
50  
360  
320  
280  
240  
µ
A
µ
A
µ
40  
30  
20  
A
µ
A
200  
µ
A
160  
µ
µ
A
A
120  
80  
µ
µ
A
A
10  
0
IB = 40  
6
1
2
3
4
5
7
Collector to Emitter Voltage VCE (V)  
Remark The graphs indicate nominal characteristics.