NE851M33
ELECTRICAL CHARACTERISTICS (TA =+25ºC)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
DC Characteristics
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
ICBO
IEBO
VCB = 5 V, IE = 0 mA
–
–
–
–
600
600
145
nA
nA
–
VEB = 1 V, IC = 0 mA
VCE = 1 V, IC = 5 mA
Note 1
hFE
100
120
RF Characteristics
Gain Bandwidth Product (1)
Gain Bandwidth Product (2)
Insertion Power Gain (1)
Insertion Power Gain (2)
Noise Figure
fT
fT
VCE = 1 V, IC = 5 mA, f = 2 GHz
VCE = 1 V, IC = 15 mA, f = 2 GHz
VCE = 1 V, IC = 5 mA, f = 2 GHz
VCE = 1 V, IC = 15 mA, f = 2 GHz
3.0
5.0
3.0
4.5
–
4.5
6.5
4.0
5.5
1.9
–
–
GHz
GHz
dB
|S21e|2
|S21e|2
NF
–
–
dB
VCE = 1 V, IC = 10 mA, f = 2 GHz,
ZS = Zopt
2.5
dB
Note 2
Reverse Transfer Capacitance
Cre
VCB = 0.5 V, IC = 0 mA, f = 1 MHz
–
0.6
0.8
pF
Notes 1. Pulse measurement: PW ≤ 350 μs, Duty Cycle ≤ 2%
2. Collector to base capacitance when the emitter grounded
hFE CLASSIFICATION
RANK
Marking
hFE Value
FB
E7
100 to 145
CEL [ CALIFORNIA EASTERN LABS ]
