NE687M13
ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C)
ORDERING INFORMATION
SYMBOLS
VCBO
VCEO
VEBO
IC
PARAMETERS
UNITS
RATINGS
PART NUMBER
NE687M13-A
QUANTITY
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
V
5.0
3.0
V
NE687M13-T3-A
V
2.0
mA
mW
°C
30
PT
Total Power Dissipation2
Junction Temperature
Storage Temperature
90
TJ
150
TSTG
°C
-65 to +150
Notes:
1. Operation in excess of any one of these parameters may result
in permanent damage.
2. With device mounted on 1.08 cm2 X 1.2 mm glass epoxy board.
TYPICAL PERFORMANCE CURVES (TA = 25°C)
TOTAL POWER DISSIPATION vs.
REVERSE TRANSFR CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
AMBIENT TEMPERATURE
300
0.6
Mounted on Glass Epoxy PCB
(1.08 cm × 1.0 mm (t) )
f = 1 MHz
2
250
200
150
0.5
0.4
0.3
0.2
0.1
100
90
50
0
25
50
75
100
125
150
0
1
2
3
4
5
Ambient Temperature, TA (°C)
Collector to Base Voltage, VCB (V)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
100
10
1
35
30
25
20
15
10
5
VCE = 2 V
IB : 50 A step
µ
500
µ
A
400 µA
300
200
µ
µ
A
A
0.1
0.01
100
µ
µ
A
A
0.001
I
B
3
= 50
0.0001
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0
1
2
4
Collector to Emmiter Voltage, VCE (V)
Base to Emmiter Voltage, VBE (V)
CEL [ CALIFORNIA EASTERN LABS ]
