NEC's NPN SILICON TRANSISTOR NE687M13
FEATURES
•
NEW MINIATURE M13 PACKAGE:
– Small transistor outline
– 1.0 X 0.5 X 0.5 mm
– Low profile / 0.50 mm package height
– Flat lead style for better RF performance
HIGH GAIN BANDWIDTH PRODUCT:
f
T
= 14 GHz
OUTLINE DIMENSIONS
(Units in mm)
PACKAGE OUTLINE M13
0.7±0.05
0.5
+0.1
ñ0.05
0.2
+0.1
ñ0.05
0.15
+0.1
ñ0.05
(Bottom View)
0.3
•
•
0.35
1.0
+0.1
ñ0.05
0.7
LOW NOISE FIGURE:
NF = 1.4 dB at 2 GHz
2
3
W2
0.35
1
0.15
+0.1
ñ0.05
DESCRIPTION
NEC's NE687M13 transistor is designed for low noise, high
gain, and low cost requirements. This high f
T
part is well suited
for very low voltage/low current designs for portable wireless
communications and cellular radio applications. NEC's new
low profile/flat lead style "M13" package is ideal for today's
portable wireless applications.
0.1
0.1
0.2
0.2
0.125
+0.1
ñ0.05
0.5±0.05
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C)
EIAJ
1
REGISTERED
SYMBOLS
f
T
NF
|S
21E
|
2
h
FE
I
CBO
I
EBO
C
RE
PART NUMBER
NUMBER
PACKAGE OUTLINE
UNITS
GHz
GHz
dB
dB
dB
dB
µA
µA
pF
0.4
8.5
6.0
70
MIN
9.0
7.0
NE687M13
2SC5618
M13
TYP
14.0
12.0
1.4
1.5
10.0
9.0
130
0.1
0.1
0.8
2.0
2.0
MAX
PARAMETERS AND CONDITIONS
Gain Bandwidth at V
CE
= 2 V, I
C
= 20 mA, f = 2 GHz
V
CE
= 1 V, I
C
= 10 mA, f = 2 GHz
Noise Figure at V
CE
= 2 V, I
C
= 3 mA, f = 2 GHz, Z
s
= Z
opt
V
CE
= 1 V, I
C
= 3 mA, f = 2 GHz, Z
s
= Z
opt
Insertion Power Gain at V
CE
= 2 V, I
C
= 20 mA, f = 2 GHz
V
CE
= 1 V, I
C
= 10 mA, f = 2 GHz
Forward Current Gain at V
CE
= 2 V, I
C
= 20 mA,
Note 2
Collector Cutoff Current at V
CB
= 5 V, I
E
= 0
Emitter Cutoff Current at V
EB
= 1 V, I
C
= 0
Feedback Capacitance at V
CB
= 2 V, I
E
= 0, f = 1 MHz,
Note 3
Notes:
1. Electronic Industrial Association of Japan.
2. Pulsed measurement, pulse width
≤
350
µs,
duty cycle
≤
2 %.
3. Capacitance is measured with emitter and case connected to the guard terminal of the bridge.
California Eastern Laboratories
CEL [ CALIFORNIA EASTERN LABS ]
