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NE68633-T1 参数 Datasheet PDF下载

NE68633-T1图片预览
型号: NE68633-T1
PDF下载: 下载PDF文件 查看货源
内容描述: 表面贴装NPN硅高频三极管 [SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR]
分类和应用: 晶体小信号双极晶体管射频小信号双极晶体管光电二极管放大器
文件页数/大小: 12 页 / 258 K
品牌: CEL [ CALIFORNIA EASTERN LABS ]
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NE686 SERIES  
TYPICAL PERFORMANCE CURVES (TA = 25°C)  
NE68618  
NE68633  
INSERTION GAIN vs.  
COLLECTOR CURRENT  
NOISE FIGURE vs.  
COLLECTOR CURRENT  
4
14  
f = 2 GHz  
f = 2 GHz  
12  
3
2
1
0
10  
2 V  
V
CE = 1 V  
CE = 2 V  
V
8
V
CE = 1 V  
6
4
10  
100  
1
2
5
20  
1
2
5
10  
Collector Current, IC (mA)  
Collector Current, IC (mA)  
NE68618  
GAIN BANDWIDTH PRODUCT  
vs. COLLECTOR CURRENT  
D.C. CURRENT GAIN vs.  
COLLECTOR CURRENT  
18  
16  
500  
f = 2 GHz  
200  
100  
50  
2 V  
V
14  
12  
V
CE = 2 V  
CE = 1 V  
10  
8
VCE = 1 V  
20  
10  
6
4
1
2
5
10  
20  
50  
100  
1
2
5
10  
Collector Current, IC (mA)  
Collector Current, IC (mA)  
NE68630  
FEED-BACK CAPACITANCE vs.  
COLLECTOR TO BASE VOLTAGE  
COLLECTOR CURRENT vs.  
BASE TO EMITTER VOLTAGE  
0.8  
50  
40  
30  
V
CE = 2 V  
f = 1 MHz  
0.6  
0.4  
0.2  
20  
10  
0
1.0  
0
0.5  
0.0  
8.0  
10.0  
2.0  
4.0  
6.0  
Base to Emitter Voltage, VBE (V)  
Collector to Base Voltage, VCB (V)