SURFACE MOUNT NPN SILICON
HIGH FREQUENCY TRANSISTOR
FEATURES
• HIGH GAIN BANDWIDTH PRODUCT:
f
T
of 15 GHz
• LOW VOLTAGE/LOW CURRENT OPERATION
• HIGH INSERTION POWER GAIN:
|S
21E
|
2
= 12 dB @ 2 V, 7 mA, 2 GHz
|S
21E
|
2
= 11 dB @ 1 V, 5 mA, 2 GHz
• LOW NOISE:
1.5 dB AT 2.0 GHz
• AVAILABLE IN SIX LOW COST PLASTIC SURFACE
MOUNT PACKAGE STYLES
18 (SOT 343 STYLE)
NE686
SERIES
19 (3 PIN ULTRA SUPER
MINI MOLD)
er s
m b ot
:
TE art nu e n
NO g p
ar
gn.
E
et
AS
in
esi
LE
ow tashe ew d
P
oll
n
f
a
for
he this d
f or f f i c e
T
ed
om mend ales o
fr
ELECTRICAL CHARACTERISTICS
om call s
rec se
lea ls:
P
tai 30
de 86
E6
N
633
68
NE 863 9
E6
9R
N
863
E6
N
DESCRIPTION
NEC's NE686 series of NPN epitaxial silicon transistors are
designed for low voltage/low current, amplifier and oscillator
applications. NE686's high f
T
make it an excellent choice for
portable wireless applications up to 5 GHz. The NE686 die is
available in six different low cost plastic surface mount pack-
age styles.
30 (SOT 323 STYLE)
33 (SOT 23 STYLE)
39 (SOT 143 STYLE)
(T
A
= 25°C)
EIAJ
2
REGISTERED
PART NUMBER
1
NUMBER
PACKAGE OUTLINE
NE68618
2SC5180
18
NE68619
2SC5181
19
NE68630
2SC5179
30
NE68633
2SC5177
33
f
T
f
T
NF
MIN
NF
MIN
|S
21e
|
2
|S
21e
|
2
h
FE
I
CBO
I
EBO
C
RE4
P
T
R
TH(J-A)
R
TH(J-C)
Gain Bandwidth Product at
V
CE
= 2 V, I
C
= 7 mA, f = 2.0 GHz
Gain Bandwidth Product at
V
CE
= 1 V, I
C
= 5 mA, f = 2.0 GHz
Minimum Noise Figure at
V
CE
= 2 V, I
C
= 3 mA, f = 2.0 GHz
Minimum Noise Figure at
V
CE
= 1 V, I
C
= 3 mA, f = 2.0 GHz
Insertion Power Gain at
V
CE
= 2V, I
C
=7 mA, f = 2.0 GHz
Insertion Power Gain at
V
CE
= 1V, I
C
=5 mA, f = 2.0 GHz
Forward Current Gain
3
at
V
CE
= 2 V, I
C
= 7 mA
Collector Cutoff Current
at V
CB
= 5 V, I
E
= 0 mA
Emitter Cutoff Current
at V
EB
= 1 V, I
C
= 0 mA
Feedback Capacitance at
V
CB
= 2 V, I
E
= 0 mA, f = 1 MHz
Total Power Dissipation
Thermal Resistance
(Junction to Ambient)
GHz
GHz
dB
dB
12 15.5
10
13
10
13
7.5
7
9
10
13
8.5
12
8.5
8.5
12
8.5
1.5
1.5
12
2.0
2.0
1.5
1.5
2.0
2.0
1.5
1.5
9
2.0
2.0
1.5
1.5
9
2.0
2.0
dB
10
8
10.5
9
7.5
7
7.5
7
dB
8.5 11
70
7
8.5
8.5
140
70
140
70
140
70
140
70
nA
nA
pF
mW
°C/W
0.3
100
100
0.5
30
833
0.4
100
100
0.6
30
1250
0.4
100
100
0.6
30
833
0.5
100
100
0.6
30
625
39R (SOT 143R STYLE)
NE68639/39R
2SC5178/78R
39/39R
SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX
10.5 13.5
12
1.5
1.5
2.0
2.0
9.5 11.5
7.5 10.5
140
100
100
0.3
0.5
30
625
Thermal Resistance(Junction to Case)
°C/W
Notes: 1. Precaution: Devices are ESD sensitive. Use proper handling procedures.
2. Electronic Industrial Association of Japan.
3. Pulsed measurement, PW
≤
350
µs,
duty cycle
≤
2%.
4. The emitter terminal should be connected to the ground terminal of
the 3 terminal capacitance bridge.
California Eastern Laboratories
CEL [ CALIFORNIA EASTERN LABS ]
