NE685M33
ELECTRICAL CHARACTERISTICS (TA =+25ºC)
PARAMETER
DC Characteristics
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
ICBO
IEBO
VCB = 5 V, IE = 0 mA
–
–
–
–
100
100
150
nA
nA
–
VEB = 1 V, IC = 0 mA
VCE = 3 V, IC = 10 mA
Note 1
hFE
75
110
RF Characteristics
Gain Bandwidth Product
Insertion Power Gain
fT
VCE = 3 V, IC = 10 mA, f = 2 GHz
VCE = 3 V, IC = 10 mA, f = 2 GHz
10
7
12
11
–
–
GHz
dB
|S21e|2
VCE = 3 V, IC = 3 mA, f = 2 GHz,
ZS = Zopt
Noise Figure
NF
–
–
1.5
0.4
2.5
0.7
dB
pF
Note 2
Reverse Transfer Capacitance
Cre
VCB = 3 V, IC = 0 mA, f = 1 MHz
Notes 1. Pulse measurement: PW ≤ 350 μs, Duty Cycle ≤ 2%
2. Collector to base capacitance when the emitter grounded
hFE CLASSIFICATION
RANK
Marking
hFE Value
FB
Y2
75 to 150
CEL [ CALIFORNIA EASTERN LABS ]
