DATA SHEET
NEC's NPN SILICON TRANSISTOR NE685M33
FEATURES
•
•
•
LOW NOISE:
NF = 1.5 dB TYP. @ V
CE
= 3 V, I
C
= 3 mA, f = 2 GHz
INSERTION POWER GAIN:
|S
21e
|
2
= 11 dB TYP. @ V
CE
= 3 V, I
C
= 10 mA, f = 2 GHz
3-PIN SUPER LEAD-LESS MINIMOLD (M33) PACKAGE
ORDERING INFORMATION
PART NUMBER
NE685M33-A
NE685M33-T3-A
QUANTITY
50 pcs (Non reel)
10 kpcs/reel
SUPPLYING FORM
• 8 mm wide embossed taping
• Pin 2 (Base) face the perforation side of the tape
Remark
To order evaluation samples, contact your nearby sales office.
The unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS
(T
A
=+25ºC)
PARAMETER
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
tot
Note
RATINGS
9.0
6.0
2.0
30
130
150
−65
to +150
UNIT
V
V
V
mA
mW
°C
°C
T
j
T
stg
Note
Mounted on 1.08 cm
2
×
1.0 mm (t) glass epoxy PCB
Caution
Observe precautions when handling because these devices are sensitive to electrostatic discharge.
California Eastern Laboratories
CEL [ CALIFORNIA EASTERN LABS ]
