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NE68133-T1B 参数 Datasheet PDF下载

NE68133-T1B图片预览
型号: NE68133-T1B
PDF下载: 下载PDF文件 查看货源
内容描述: NPN硅高频三极管 [NPN SILICON HIGH FREQUENCY TRANSISTOR]
分类和应用: 晶体晶体管光电二极管放大器
文件页数/大小: 21 页 / 627 K
品牌: CEL [ CALIFORNIA EASTERN LABS ]
 浏览型号NE68133-T1B的Datasheet PDF文件第1页浏览型号NE68133-T1B的Datasheet PDF文件第2页浏览型号NE68133-T1B的Datasheet PDF文件第3页浏览型号NE68133-T1B的Datasheet PDF文件第4页浏览型号NE68133-T1B的Datasheet PDF文件第6页浏览型号NE68133-T1B的Datasheet PDF文件第7页浏览型号NE68133-T1B的Datasheet PDF文件第8页浏览型号NE68133-T1B的Datasheet PDF文件第9页  
NE681 SERIES  
TYPICAL PERFORMANCE CURVES (TA = 25°C)  
DC POWER DERATING CURVES  
COLLECTOR TO BASE CAPACITANCE  
vs. COLLECTOR TO BASE VOLTAGE  
5.0  
400  
3.0  
2.0  
300  
200  
1.0  
0.7  
0.5  
NE68135  
NE68133  
0.3  
0.2  
100  
0
NE68133  
NE68135  
0.1  
0
50  
100  
150  
200  
1
2
3
5
7
10  
20  
30  
50  
Ambient Temperature, TA (°C)  
Collector to Base Voltage, VCB (V)  
FORWARD CURRENT GAIN  
vs. COLLECTOR CURRENT  
GAIN BANDWIDTH PRODUCT  
vs. COLLECTOR CURRENT  
500  
50  
VCE = 8 V  
VCE = 8 V  
300  
200  
30  
20  
100  
10  
70  
50  
7
5
30  
20  
3
2
10  
1
1
2
3
5
7
10  
20 30  
50  
1
2
3
5
7
10  
20 30  
50  
Collector Current, IC (mA)  
Collector Current, IC (mA)  
NE68133  
NOISE FIGURE  
NE68100 & NE68135  
NOISE FIGURE  
vs. COLLECTOR CURRENT  
vs. COLLECTOR CURRENT  
3.0  
2.5  
2.0  
1.5  
1.0  
3.0  
2.5  
2.0  
1.5  
1.0  
V
CE = 8 V  
V
CE = 8 V  
f = 2 GHz  
f = 1 GHz  
0.5  
0
0.5  
0
1
2
3
5
7
10  
20 30  
50  
1
2
3
5
7
10  
20 30  
50  
Collector Current, IC (mA)  
Collector Current, IC (mA)