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NE663M04 参数 Datasheet PDF下载

NE663M04图片预览
型号: NE663M04
PDF下载: 下载PDF文件 查看货源
内容描述: NPN硅高频三极管 [NPN SILICON HIGH FREQUENCY TRANSISTOR]
分类和应用:
文件页数/大小: 10 页 / 198 K
品牌: CEL [ CALIFORNIA EASTERN LABS ]
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NE663M04  
TYPICAL PERFORMANCE CURVES (TA = 25°C)  
MAXIMUM STABLE GAIN, INSERTION POWER GAIN,  
MAXIMUM AVAILABLE GAIN vs. FREQUENCY  
40  
VCE = 2 V  
I
C = 50 mA  
35  
30  
25  
20  
15  
10  
MSG  
MAG  
2
|S21e  
|
5
0
0.1  
1.0  
Frequency, f (GHz)  
10.0  
MAXIMUM STABLE GAIN, INSERTION POWER GAIN,  
MAXIMUM AVAILABLE GAIN vs. COLLECTOR CURRENT  
MAXIMUM STABLE GAIN, INSERTION POWER GAIN,  
MAXIMUM AVAILABLE GAIN vs. COLLECTOR CURRENT  
30  
30  
V
CE = 2V  
V
CE = 2 V  
f = 2 GHz  
f = 1 GHz  
MAG  
25  
25  
20  
15  
10  
20  
15  
10  
5
MSG  
MAG  
2
|S21e  
|
5
0
MAG/MSG (dB) = 2.0 GHz  
S21 (dB) = 2.0 GHz  
0
1
10  
100  
1
10  
Collector Current, IC (mA)  
100  
Collector Current, lC (mA)  
OUTPUT POWER COLLECTOR  
CURRENT vs. INPUT POWER  
OUTPUT POWER COLLECTOR  
CURRENT vs. INPUT POWER  
25  
20  
15  
10  
150  
25  
20  
15  
10  
150  
V
CE = 2 V  
V
CE = 2 V  
f = 1 GHz  
P
out  
f = 2 GHz  
125  
100  
75  
50  
25  
0
125  
100  
75  
50  
25  
0
P
out  
IC  
5
0
5
0
I
C
-5  
-15  
-5  
-15  
-10  
-5  
0
5
10  
15  
-10  
-5  
0
5
10  
15  
Input Power Pin (dBm)  
Input Power Pin (dBm)