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NE663M04 参数 Datasheet PDF下载

NE663M04图片预览
型号: NE663M04
PDF下载: 下载PDF文件 查看货源
内容描述: NPN硅高频三极管 [NPN SILICON HIGH FREQUENCY TRANSISTOR]
分类和应用:
文件页数/大小: 10 页 / 198 K
品牌: CEL [ CALIFORNIA EASTERN LABS ]
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NE663M04  
TYPICAL PERFORMANCE CURVES (TA = 25°C)  
COLLECTOR CURRENT vs.  
BASE TO EMITTER VOLTAGE  
DC POWER DERATING CURVES  
50.000  
400  
VCE = 2V  
When case temperature  
is specified  
350  
330  
40.000  
30.000  
300  
Mounted on  
ceramic substrate  
(15 × 15 mm, t = 0.6 mm)  
250  
200  
190  
20.000  
10.000  
150  
100  
50  
Free Air  
0.000  
200.0 400.0  
600.0 800.0 1.000  
1.200  
0
25  
50  
75  
100 125 150  
Base to Emitter Voltage, VBE (V)  
Ambient Temperature, TA (°C)  
DC FORWARD CURRENT vs.  
COLLECTOR CURRENT  
COLLECTOR CURRENT vs.  
COLLECTOR TO EMITTER VOLTAGE  
100  
80  
200  
150  
100  
50  
V
CE = 2.0 V  
1050 µA  
900 µA  
750 µA  
600 µA  
450 µA  
300 µA  
60  
40  
20  
150 µA  
5 µA  
0
0.01  
0.1  
1
10  
100  
0
1.0  
2.0  
3.0 3.5  
Collector Current, IC (mA)  
Collector to Emitter Voltage, VCE (V)  
GAIN BANDWIDTH PRODUCT vs.  
COLLECTOR CURRENT  
FEEDBACK CAPACITANCE vs.  
COLLECTOR TO EMITTER VOLTAGE  
30  
25  
20  
1.00  
0.80  
0.60  
0.40  
0.20  
V
CE = 3.0 V  
freq. = 1 MHz  
15  
10  
5
0
0.00  
1
10  
100  
1000  
0.0  
1.0  
2.0  
3.0  
4.0  
5.0  
Collector Current, IC (mA)  
Collector to Emitter Voltage, VCE (V)