NE6510179A
NONLINEAR MODEL
Q1
SCHEMATIC
RDX
LD
LDX
DRAIN
0.65 nH
0.01 nH
0.2 ohms
LGX
LG
RDBX
GATE
400 ohms
0.001 nH
0.75 nH
CDS PKG
0.1 pF
CBSX
100 pF
CGS PKG
0.1 pF
RSX
0.05 ohms
LSX
0.001 nH
SOURCE
FET NONLINEAR MODEL PARAMETERS (1)
UNITS
Parameter
Units
Parameters
VTO
Q1
-0.756
0
Parameters
RG
Q1
0.05
0.001
0.001
0
capacitance
inductance
resistance
picofarads
nanohenries
ohms
VTOSC
ALPHA
BETA
GAMMA
GAMMADC(2)
Q
RD
2
RS
2.245
0
RGMET
KF
MODEL RANGE
0
Frequency: 0.5 to 4 GHz
0.01
1.7
AF
1
Bias:
Date:
VDS = 2.2 V to 5 V, ID = 150 mA to 300 mA
3/29/2000
TNOM
XTI
27
3
DELTA
VBI
0
0.6
EG
1.43
0
IS
1e-16
1
VTOTC
BETATCE
FFE
N
0
RIS
0
1
RID
0
TAU
10e-12
0.5e-12
0.001
0
CDS
RDB
CBS
CGSO(3)
CGDO(4)
DELTA1
DELTA2
FC
20e-12
4e-12
0.3
0.2
0.5
VBR
Infinity
(1) Series IV Libra TOM Model
The parameter in Libra corresponds to the parameter in PSpice:
(2) GAMMADC
(3) CGSO
GAMMA
CGS
(4) CGDO
CGD
Life Support Applications
These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably
be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and
agree to fully indemnify CEL for all damages resulting from such improper use or sale.
11/04/2002
A Business Partner of NEC Compound Semiconductor Devices, Ltd.
CEL [ CALIFORNIA EASTERN LABS ]
