欢迎访问ic37.com |
会员登录 免费注册
发布采购

NE5510279A 参数 Datasheet PDF下载

NE5510279A图片预览
型号: NE5510279A
PDF下载: 下载PDF文件 查看货源
内容描述: 3.5 V工作电压硅射频功率MOSFET用于GSM1800发送放大器 [3.5 V OPERATION SILICON RF POWER MOSFET FOR GSM1800 TRANSMISSION AMPLIFIERS]
分类和应用: 晶体放大器晶体管射频GSM
文件页数/大小: 5 页 / 42 K
品牌: CEL [ CALIFORNIA EASTERN LABS ]
 浏览型号NE5510279A的Datasheet PDF文件第1页浏览型号NE5510279A的Datasheet PDF文件第2页浏览型号NE5510279A的Datasheet PDF文件第4页浏览型号NE5510279A的Datasheet PDF文件第5页  
NE5510279A  
TYPICAL PERFORMANCE CURVES (TA = 25°C)  
DRAIN CURRENT vs.  
DRAIN TO SOURCE VOLTAGE  
DRAIN CURRENT vs. GATE TO  
SOURCE VOLTAGE  
12.0  
10000  
1000  
100  
10  
V
GS MAX = 10 V  
V
DS = 3.5 V  
Step = 1.0 V  
10.0  
8.0  
6.0  
4.0  
2.0  
0.0  
1
1.5  
3.0  
2.5  
0
2
4
6
8
10  
12  
14  
16  
1.0  
2.0  
Gate to Source Voltage, VGS (V)  
Drain to Source Voltage, VDS (V)  
OUTPUT POWER, DRAIN CURRENT,  
EFFICIENCY AND POWER ADDED  
EFFICIENCY vs. INPUT POWER  
OUTPUT POWER, DRAIN CURRENT, EFFICIENCY  
AND POWER ADDED EFFICIENCY vs.  
GATE TO SOURCE VOLTAGE  
2500  
35  
2500  
33  
PMAX = 32.6 dBm  
PO = 32.0 dBm  
VDS = 3.5 V  
f = 1.8 GHz  
PIN = 25 dBm  
V
I
DS = 3.5 V  
DQ = 400 mA  
f = 1.8 GHz  
2000  
2000  
1500  
30  
25  
32  
P
OUT  
POUT  
1500  
1000  
31  
IDS  
20  
15  
30  
29  
100  
50  
1000  
100  
50  
I
D
η
η
500  
0
500  
0
η
ADD  
η
ADD  
APC  
10  
28  
0
0
30  
5
10  
15  
20  
25  
0.0  
1.0  
2.0  
3.0  
4.0  
Input Power, PIN (dBm)  
Gate to Source Voltage, VGS (V)  
OUTPUT POWER, DRAIN CURRENT, EFFICIENCY  
AND POWER ADDED EFFICIENCY vs.  
GATE TO SOURCE VOLTAGE  
OUTPUT POWER, DRAIN CURRENT,  
EFFICIENCY AND POWER ADDED  
EFFICIENCY vs. INPUT POWER  
2500  
32  
31  
30  
29  
2500  
35  
PO = 31.1 dBm  
P
MAX = 30.6 dBm  
2000  
2000  
1500  
1000  
30  
25  
V
DS = 2.8 V  
f = 1.8 GHz  
IN = 25 dBm  
V
I
DS = 2.8 V  
DQ = 400 mA  
f = 1.8 GHz  
P
OUT  
P
OUT  
P
1500  
1000  
I
DS  
100  
50  
0
20  
15  
10  
100  
50  
I
D
η
η
28  
27  
500  
0
500  
0
η
ADD  
η
ADD  
APC  
0
3.0  
0.0  
1.0  
2.0  
4.0  
10  
5
15  
20  
25  
30  
Gate to Source Voltage, VGS (V)  
Input Power, PIN (dBm)