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NE5510279A 参数 Datasheet PDF下载

NE5510279A图片预览
型号: NE5510279A
PDF下载: 下载PDF文件 查看货源
内容描述: 3.5 V工作电压硅射频功率MOSFET用于GSM1800发送放大器 [3.5 V OPERATION SILICON RF POWER MOSFET FOR GSM1800 TRANSMISSION AMPLIFIERS]
分类和应用: 晶体放大器晶体管射频GSM
文件页数/大小: 5 页 / 42 K
品牌: CEL [ CALIFORNIA EASTERN LABS ]
 浏览型号NE5510279A的Datasheet PDF文件第1页浏览型号NE5510279A的Datasheet PDF文件第3页浏览型号NE5510279A的Datasheet PDF文件第4页浏览型号NE5510279A的Datasheet PDF文件第5页  
NE5510279A  
PERFORMANCE SPECIFICATIONS (Peak measurement at Duty Cycle 1/8, 4.6 mS period, TA = 25˚C)  
SYMBOLS  
CHARACTERISTICS  
UNITS  
MIN  
TYP  
MAX  
TEST CONDITIONS  
f = 1.8 GHz, PIN = 10 dBm,  
VDS = 3.5 V,IDQ = 400 mA  
f = 1.8 GHz, PIN = 25 dBm,  
VDS = 3.5 V,IDQ = 400 mA  
GL  
Linear Gain  
dB  
10.0  
POUT(1)  
IOP(1)  
Output Power  
dBm  
mA  
%
31.0  
32.0  
810  
Operating Current  
ηADD(1)  
POUT(2)  
IOP(2)  
Power Added Efficiency  
Maximum Output Power  
Operating Current  
37  
45  
dBm  
mA  
dBm  
mA  
dB  
32.6  
1,000  
31.1  
880  
f = 1.8 GHz, PIN = 25 dBm  
VDS = 3.5 V,VGS = 2.5 V  
f = 1.8 GHz, PIN = 25 dBm  
VDS = 2.8 V,VGS = 2.5 V  
f = 1.8 GHz, PIN = 10 dBm,  
VDS = 4.8 V,IDQ = 400 mA  
f = 1.8 GHz, PIN = 28 dBm,  
VDS = 4.8 V,IDQ = 400 mA  
POUT(3)  
IOP(3)  
Output Power at Lower Voltage  
Operating Current  
GL  
Linear Gain  
10.0  
POUT  
IOP  
Output Power  
dBm  
mA  
%
35.0  
1,120  
48  
Operating Current  
Power Added Efficiency  
Linear Gain  
ηADD  
GL  
dB  
35.0  
35.0  
35.0  
f = 1.8 GHz, PIN = 10 dBm,  
VDS =6.0 V,IDQ = 400 mA  
f = 1.8 GHz, PIN = 30 dBm,  
VDS =6.0 V,IDQ = 400 mA  
POUT  
IOP  
Output Power  
dBm  
mA  
%
37.0  
1,400  
49  
Operating Current  
Power Added Efficiency  
ηADD  
ORDERING INFORMATION  
ABSOLUTE MAXIMUM RATINGS1 (TA = 25 °C)  
PART NUMBER  
QTY  
SYMBOLS  
VDS  
VGS  
ID  
PARAMETERS  
Drain Supply Voltage  
Gate Supply Voltage  
Drain Current  
UNITS  
RATINGS  
NE5510279A-T1  
Note:  
Embossed tape 12 mm wide. Gate pin faces perforation side of the  
tape.  
1 Kpcs/Reel  
V
8.5  
V
6
1.0  
A
ID  
Drain Current (Pulse Test)2  
Input Power3  
A
2.0  
PIN  
dBm  
W
30  
PT  
Total Power Dissipation  
Channel Temperature  
Storage Temperature  
2.4  
TCH  
TSTG  
°C  
°C  
125  
-55 to +125  
Notes:  
1. Operation in excess of any one of these parameters may result  
in permanent damage.  
2. Duty Cycle 50%, ton = 1 ms.  
3. Frequency = 1.8 GHz, VDS = 3.5 V.  
RECOMMENDED OPERATING CONDITIONS  
SYMBOLS  
PARAMETERS  
Drain Supply Voltage  
Gate Supply Voltage  
Drain Current (Pulse Test)  
Input Power  
TEST CONDITIONS  
UNITS  
V
MIN  
2.8  
0
TYP  
3.5  
2.0  
MAX  
6.0  
2.5  
1.5  
26  
VDS  
VGS  
ID  
V
Duty Cycle 50%, Ton1ms  
A
PIN  
f
Frequency = 1.8 GHz, VDS = 3.5 V  
dBm  
GHz  
˚C  
24  
25  
Operating Frequency Range  
Operating Temperature  
1.6  
-30  
2.0  
85  
TOP  
25