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NE5510179A 参数 Datasheet PDF下载

NE5510179A图片预览
型号: NE5510179A
PDF下载: 下载PDF文件 查看货源
内容描述: 3.5 V工作电压硅射频功率MOSFET 1.9 GHZ发送放大器 [3.5 V OPERATION SILICON RF POWER MOSFET FOR 1.9 GHZ TRANSMISSION AMPLIFIERS]
分类和应用: 放大器射频
文件页数/大小: 4 页 / 42 K
品牌: CEL [ CALIFORNIA EASTERN LABS ]
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NE5510179A  
TYPICAL PERFORMANCE CURVES (TA = 25°C)  
OUTPUT POWER, DRAIN CURRENT,  
EFFICIENCY, AND POWER ADDED  
EFFICIENCY VS. GATE TO SOURCE  
VOLTAGE  
OUTPUT POWER, DRAIN CURRENT,  
EFFICIENCY, AND POWER ADDED  
EFFICIENCY VS. INPUT POWER  
31  
31  
30  
29  
28  
27  
26  
1250  
1000  
750  
1250  
PO = 29.7 dBm  
PMAX = 30.1 dBm  
26  
21  
16  
11  
6
1000  
750  
500  
250  
0
VDS = 3.5 V,  
P
OUT  
V
I
DS = 3.5 V,  
DQ = 200 mA,  
freq = 1.9 GHz  
freq = 1.9 GHz,  
PIN = 22 dBm  
POUT  
I
DS  
100  
500  
100  
50  
0
I
D
η
η
50  
0
250  
0
η
ADD  
η
ADD  
APC  
1.0  
2.0  
3.0  
0.0  
0
5
10  
15  
20  
25  
4.0  
Gate to Source Voltage, VGS (V)  
Input Power, PIN (dBm)  
OUTPUT POWER, DRAIN CURRENT,  
EFFICIENCY, AND POWER ADDED  
EFFICIENCY VS. GATE TO SOURCE  
VOLTAGE  
OUTPUT POWER, DRAIN CURRENT,  
EFFICIENCY, AND POWER ADDED  
EFFICIENCY VS. INPUT POWER  
30  
30  
29  
28  
27  
26  
25  
1250  
1000  
750  
500  
250  
0
30  
1250  
1000  
750  
500  
250  
0
P
O
= 28.7 dBm  
P
MAX = 29.0 dBm  
25  
20  
15  
10  
5
V
DS = 2.8 V,  
freq = 1.9 GHz,  
IN = 22 dBm  
P
OUT  
V
I
DS = 2.8 V,  
DQ = 200 mA,  
freq = 1.9 GHz  
P
POUT  
I
ds  
100  
50  
0
100  
50  
0
I
D
η
η
η
ADD  
η
ADD  
APC  
1.0  
0
5
10  
15  
20  
25  
2.0  
3.0  
0.0  
4.0  
Input Power, PIN (dBm)  
Gate to Source Voltage, VGS (V)  
P.C.B. LAYOUT1 (Units in mm)  
4.0  
1.7  
Drain  
Gate  
Source  
Through hole φ 0.2 × 33  
Note:  
0.5  
0.5  
1. Use rosin or other material to prevent solder from penetrating  
through-holes.  
6.1