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NE5510179A 参数 Datasheet PDF下载

NE5510179A图片预览
型号: NE5510179A
PDF下载: 下载PDF文件 查看货源
内容描述: 3.5 V工作电压硅射频功率MOSFET 1.9 GHZ发送放大器 [3.5 V OPERATION SILICON RF POWER MOSFET FOR 1.9 GHZ TRANSMISSION AMPLIFIERS]
分类和应用: 放大器射频
文件页数/大小: 4 页 / 42 K
品牌: CEL [ CALIFORNIA EASTERN LABS ]
 浏览型号NE5510179A的Datasheet PDF文件第1页浏览型号NE5510179A的Datasheet PDF文件第3页浏览型号NE5510179A的Datasheet PDF文件第4页  
NE5510179A  
ABSOLUTE MAXIMUM RATINGS1 (TA = 25 °C)  
RECOMMENDED OPERATING CONDITIONS  
SYMBOLS  
PARAMETERS  
UNITS TYP  
MAX  
6.0  
2.5  
0.5  
23  
SYMBOLS  
VDS  
VGS  
ID  
PARAMETERS  
Drain Supply Voltage  
Gate Supply Voltage  
Drain Current (continuous)  
Drain Current (Pulse Test)2  
Input Power3  
UNITS  
RATINGS  
VDS  
Drain to Supply Voltage  
Gate Supply Voltage  
Drain Current (Pulse Test)1  
Input Power2  
V
V
3.5  
2.0  
V
V
8.5  
VGS  
6
A0.5  
1.0  
IDS  
A
PIN  
dBm  
GHz  
°C  
22  
ID  
A
dBm  
W
freq  
Operating Frequency Range  
Operating Temperature  
2.0  
85  
PIN  
27  
TOP  
25  
PT  
Total Power Dissipation  
Channel Temperature  
Storage Temperature  
1.6  
TCH  
TSTG  
°C  
125  
Note:  
°C  
-55 to +125  
1. Duty Cycle 50%, Ton = 1ms.  
2. Freq = 1.9 GHz, VDS = 3.5 V.  
Note:  
1. Operation in excess of any one of these parameters may result  
in permanent damage.  
2. Duty Cycle 50%, Ton = 1ms.  
3. Freq = 1.9 GHz, VDS = 3.5 V.  
ORDERING INFORMATION1  
PART NUMBER  
QTY  
NE5510179A-T1  
Note:  
1 K/Reel  
1. Embossed tape 12 mm wide. Gate pin face to perforations side  
of the tape.  
TYPICAL PERFORMANCE CURVES (TA = 25°C)  
DRAIN CURRENT vs.  
DRAIN TO SOURCE CURRENT  
6.0  
DRAIN CURRENT vs.  
GATE TO SOURCE VOLTAGE  
1000  
VGS (MAX) = 10 V,  
Step = 1.0 V  
V
DS = 3.5 V  
5.0  
4.0  
3.0  
2.0  
1.0  
0.0  
100  
10  
1
0
0
2
4
6
8
10  
12  
14  
16  
1.0  
1.5  
2.0  
2.5  
3.0  
Drain to Source Current, VDS (V)  
Gate to Source Voltage, VGS (V)