NE4210S01
NE4210S01 NONLINEAR MODEL
Note:
This non-linear model was developed for the NE3210S01 and is
generally applicable for NE4210S01 designs.
CGD_PKG
SCHEMATIC
0.001pF
Ldx
DRAIN
0.68nH
Rdx
6 ohms
Q1
Lgx
GATE
0.72nH
Rgx
6 ohms
Lsx
0.1nH
CDS_PKG
0.035PF
CGS_PKG
0.04pF
Rsx
0.06 ohms
SOURCE
FET NONLINEAR MODEL PARAMETERS (1)
UNITS
Parameter
Units
seconds
farads
henries
ohms
Parameters
VTO
Q1
-0.798
0
Parameters
RG
Q1
8
time
capacitance
inductance
resistance
voltage
VTOSC
ALPHA
BETA
GAMMA
GAMMADC
Q
RD
0.5
3
8
RS
0.0952
0.072
0.065
2.5
RGMET
KF
0
volts
0
current
amps
AF
1
TNOM
XTI
27
3
DELTA
VBI
0.5
MODEL RANGE
0.6
EG
1.43
0
Frequency: 0.1 to 22.5 GHz
Bias:
Date:
VDS = 1 V to 3 V, ID = 5 mA to 30 mA
1/99
IS
1e-14
1
VTOTC
BETATCE
FFE
N
0
RIS
0
1
RID
0
TAU
4e-12
0.12e-12
5000
1e-9
0.36e-12
0.014e-12
0.3
CDS
RDB
CBS
CGSO
CGDO
DELTA1
DELTA2
FC
0.6
0.5
VBR
Infinity
(1) Series IV Libra TOM Model
Life Support Applications
These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably
be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and
agree to fully indemnify CEL for all damages resulting from such improper use or sale.
09/12/2005
A Business Partner of NEC Compound Semiconductor Devices, Ltd.
CEL [ CALIFORNIA EASTERN LABS ]
