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NE4210S01 参数 Datasheet PDF下载

NE4210S01图片预览
型号: NE4210S01
PDF下载: 下载PDF文件 查看货源
内容描述: 超低噪声HJ FET [SUPER LOW NOISE HJ FET]
分类和应用:
文件页数/大小: 7 页 / 252 K
品牌: CEL [ CALIFORNIA EASTERN LABS ]
 浏览型号NE4210S01的Datasheet PDF文件第1页浏览型号NE4210S01的Datasheet PDF文件第2页浏览型号NE4210S01的Datasheet PDF文件第4页浏览型号NE4210S01的Datasheet PDF文件第5页浏览型号NE4210S01的Datasheet PDF文件第6页浏览型号NE4210S01的Datasheet PDF文件第7页  
NE4210S01  
TYPICAL PERFORMANCE CURVES (TA = 25°C)  
DRAIN CURRENT vs.  
DRAIN CURRENT vs.  
DRAIN TO SOURCE VOLTAGE  
GATE TO SOURCE VOLTAGE  
60  
50  
40  
100  
85  
60  
VGS = 0.00 V  
VDS =2V  
-0.09 V  
50  
-0.18 V  
70  
45  
30  
15  
40  
-0.27 V  
30  
20  
10  
30  
20  
10  
-0.36 V  
-0.45 V  
-0.54 V  
-0.63 V  
-
0
0
-1.20 -1.0  
-0.8  
-0.6  
-0.4  
-0.2  
0
0.2  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
0
Drain to Source Voltage, VDS (V)  
Gate to Source Voltage, VGS (V)  
TOTAL POWER DISSIPATION vs.  
AMBIENT TEMPERATURE  
MAXIMUM AVAILABLE GAIN, FORWARD  
INSERTION GAIN vs. FREQUENCY  
250  
200  
24  
V
DS = 2 V  
ID = 10 mA  
MSG.  
20  
16  
MAG.  
150  
100  
12  
8
2
|S21S  
|
50  
0
4
50  
100  
150  
200  
250  
1
2
4
6
8
10 14 20  
30  
Ambient Temperature, TA (°C)  
Frequency, f (GHz)  
NOISE FIGURE and ASSOCIATED  
GAIN vs. DRAIN CURRENT  
NOISE FIGURE & ASSOCIATED  
GAIN vs. FREQUENCY  
24  
V
DS = 2 V  
15  
14  
V
DS = 2 V  
f = 12 GHz  
ID = 10 mA  
G
A
20  
16  
GA  
13  
12  
11  
2.0  
1.5  
1.0  
0.5  
1.0  
0.5  
12  
8
NF  
NF  
0
4
1
2
4
6
8
10 14 20  
30  
0
10  
20  
30  
Frequency, f (GHz)  
Drain Current, ID (mA)