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NE3515S02 参数 Datasheet PDF下载

NE3515S02图片预览
型号: NE3515S02
PDF下载: 下载PDF文件 查看货源
内容描述: 异质结型场效应晶体管 [HETERO JUNCTION FIELD EFFECT TRANSISTOR]
分类和应用: 晶体晶体管场效应晶体管
文件页数/大小: 9 页 / 415 K
品牌: CEL [ CALIFORNIA EASTERN LABS ]
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NE3515S02  
RECOMMENDED OPERATING CONDITIONS (TA = +25C)  
Parameter  
Drain to Source Voltage  
Drain Current  
Symbol  
VDS  
ID  
MIN.  
TYP.  
2
MAX.  
Unit  
V
1
5
3
25  
0
10  
mA  
dBm  
Input Power  
Pin  
ELECTRICAL CHARACTERISTICS (TA = +25C, unless otherwise specified)  
Parameter  
Symbol  
IGSO  
Test Conditions  
MIN.  
TYP.  
0.5  
MAX.  
Unit  
A  
Gate to Source Leak Current  
Saturated Drain Current  
Gate to Source Cutoff Voltage  
Transconductance  
VGS = 3 V  
10  
88  
1.4  
IDSS  
VDS = 2 V, VGS = 0 V  
32  
0.2  
45  
60  
mA  
V
VGS (off)  
gm  
VDS = 2 V, ID = 100 A  
VDS = 2 V, ID = 10 mA  
0.8  
70  
mS  
dB  
Noise Figure  
NF  
VDS = 2 V, ID = 10 mA, f = 12 GHz  
0.3  
0.5  
Associated Gain  
Ga  
11  
12.5  
+14  
dB  
Gain 1 dB Compression  
Output Power  
PO (1 dB)  
VDS = 3 V, ID = 25 mA set (Non-RF),  
f = 12 GHz  
dBm  
2
Data Sheet PG10708EJ01V0DS