HETERO JUNCTION FIELD EFFECT TRANSISTOR
NE3515S02
X to Ku-BAND SUPER LOW NOISE AMPLIFIER
N-CHANNEL HJ-FET
FEATURES
• Super low noise figure, high associated gain and middle output power
NF = 0.3 dB TYP., G
a
= 12.5 dB TYP. @ f = 12 GHz, V
DS
= 2 V, I
D
= 10 mA
P
O (1dB)
= +14 dBm TYP. @ f = 12 GHz, V
DS
= 3 V, I
D
= 25 mA set (Non-RF)
• Micro-X plastic (S02) package
APPLICATIONS
• X to Ku-band local buffer amplifier, PA driver amplifier, low noise amplifier, mixer
• DBS LNB, VSAT
• Other X to Ku-band communication systems
ORDERING INFORMATION
Part Number
NE3515S02-T1C
NE3515S02-T1D
Order Number
NE3515S02-T1C-A
NE3515S02-T1D-A
Package
S02 (Pb-Free)
Quantity
2 kpcs/reel
10 kpcs/reel
Marking
G
Supplying Form
• 8 mm wide embossed taping
• Pin 4 (Gate) faces the perforation side
of the tape
Remark
To order evaluation samples, contact your nearby sales office.
Part number for sample order: NE3515S02-A
ABSOLUTE MAXIMUM RATINGS (T
A
= +25C)
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Gate Current
Total Power Dissipation
Channel Temperature
Storage Temperature
Symbol
V
DS
V
GS
I
D
I
G
P
tot
Note
Ratings
4
3
I
DSS
100
165
+125
65
to +125
Unit
V
V
mA
A
mW
C
C
T
ch
T
stg
Note
Mounted on 1.08 cm
2
1.0 mm (t) glass epoxy PCB
Caution
:
Observe precautions when handling because these devices are sensitive to electrostatic discharge
Document No. PG10708EJ01V0DS (1st edition)
Date Published February 2008 NS
CEL [ CALIFORNIA EASTERN LABS ]
