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NE3514S02-T1D 参数 Datasheet PDF下载

NE3514S02-T1D图片预览
型号: NE3514S02-T1D
PDF下载: 下载PDF文件 查看货源
内容描述: K波段超低噪声放大器N沟道HJ -FET [K BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET]
分类和应用: 放大器
文件页数/大小: 8 页 / 265 K
品牌: CEL [ CALIFORNIA EASTERN LABS ]
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NE3514S02  
TYPICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified)  
TOTAL POWER DISSIPATION  
vs. AMBIENT TEMPERATURE  
DRAIN CURRENT vs.  
DRAIN TO SOURCE VOLTAGE  
250  
200  
150  
100  
50  
100  
80  
60  
40  
20  
Mounted on Glass Epoxy PCB  
(1.08 cm2 × 1.0 mm (t) )  
V
GS = 0 V  
0.2 V  
0.4 V  
0.6 V  
0
50  
100  
150  
200  
(˚C)  
250  
0
1.0  
Drain to Source Voltage VDS (V)  
2.0  
Ambient Temperature T  
A
DRAIN CURRENT vs.  
GATE TO SOURCE VOLTAGE  
80  
60  
V
DS = 2 V  
40  
20  
0
–2.0  
–1.0  
Gate to Source Voltage VGS (V)  
0
MINIMUM NOISE FIGURE,  
ASSOCIATED GAIN vs. FREQUENCY  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
20  
18  
16  
14  
12  
10  
8
V
DS = 2 V  
ID = 10 mA  
G
a
6
NFmin  
4
2
0.2  
0.0  
0
30  
0
5
10  
15  
20  
25  
Frequency f (GHz)  
Remark The graphs indicate nominal characteristics.  
3
Data Sheet PG10593EJ01V0DS