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NE3514S02-T1D 参数 Datasheet PDF下载

NE3514S02-T1D图片预览
型号: NE3514S02-T1D
PDF下载: 下载PDF文件 查看货源
内容描述: K波段超低噪声放大器N沟道HJ -FET [K BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET]
分类和应用: 放大器
文件页数/大小: 8 页 / 265 K
品牌: CEL [ CALIFORNIA EASTERN LABS ]
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NE3514S02  
RECOMMENDED OPERATING CONDITIONS (TA = +25°C)  
Parameter  
Drain to Source Voltage  
Drain Current  
Symbol  
VDS  
ID  
MIN.  
TYP.  
2
MAX.  
Unit  
V
1
5
3
15  
0
10  
mA  
dBm  
Input Power  
Pin  
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified)  
Parameter  
Gate to Source Leak Current  
Saturated Drain Current  
Gate to Source Cutoff Voltage  
Transconductance  
Symbol  
IGSO  
Test Conditions  
MIN.  
TYP.  
0.5  
MAX.  
Unit  
µA  
mA  
V
VGS = 3 V  
10  
70  
2.0  
IDSS  
VDS = 2 V, VGS = 0 V  
15  
0.2  
40  
40  
VGS (off)  
gm  
VDS = 2 V, ID = 100 µA  
0.7  
55  
VDS = 2 V, ID = 10 mA  
mS  
dB  
dB  
Noise Figure  
NF  
VDS = 2 V, ID = 10 mA, f = 20 GHz  
0.75  
10  
1.0  
Associated Gain  
Ga  
8
2
Data Sheet PG10593EJ01V0DS  
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