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NE3512S02-T1D 参数 Datasheet PDF下载

NE3512S02-T1D图片预览
型号: NE3512S02-T1D
PDF下载: 下载PDF文件 查看货源
内容描述: 异质结型场效应晶体管 [HETERO JUNCTION FIELD EFFECT TRANSISTOR]
分类和应用: 晶体晶体管场效应晶体管
文件页数/大小: 8 页 / 266 K
品牌: CEL [ CALIFORNIA EASTERN LABS ]
 浏览型号NE3512S02-T1D的Datasheet PDF文件第1页浏览型号NE3512S02-T1D的Datasheet PDF文件第2页浏览型号NE3512S02-T1D的Datasheet PDF文件第4页浏览型号NE3512S02-T1D的Datasheet PDF文件第5页浏览型号NE3512S02-T1D的Datasheet PDF文件第6页浏览型号NE3512S02-T1D的Datasheet PDF文件第7页浏览型号NE3512S02-T1D的Datasheet PDF文件第8页  
NE3512S02  
TYPICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified)  
TOTAL POWER DISSIPATION  
vs. AMBIENT TEMPERATURE  
DRAIN CURRENT vs.  
DRAIN TO SOURCE VOLTAGE  
250  
200  
150  
100  
50  
100  
80  
60  
40  
20  
Mounted on Glass Epoxy PCB  
(1.08 cm2 × 1.0 mm (t) )  
V
GS = 0 V  
0.2 V  
0.4 V  
0.6 V  
0
50  
100  
150  
200  
(˚C)  
250  
0
1.0  
Drain to Source Voltage VDS (V)  
2.0  
Ambient Temperature T  
A
DRAIN CURRENT vs.  
GATE TO SOURCE VOLTAGE  
80  
60  
V
DS = 2 V  
40  
20  
0
–2.0  
–1.0  
Gate to Source Voltage VGS (V)  
0
MINIMUM NOISE FIGURE,  
ASSOCIATED GAIN vs. FREQUENCY  
MINIMUM NOISE FIGURE,  
ASSOCIATED GAIN vs. DRAIN CURRENT  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
16  
14  
12  
10  
8
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
25  
20  
15  
10  
f = 12 GHz  
V
DS = 2 V  
= 10 mA  
V
DS = 2 V  
I
D
G
a
G
a
6
NFmin  
4
NFmin  
5
0
2
0.2  
0.0  
0
25  
2
4
6
8
10  
12  
14  
16  
18  
0
5
10  
15  
(mA)  
20  
Frequency f (GHz)  
Drain Current I  
D
Remark The graphs indicate nominal characteristics.  
3
Data Sheet PG10592EJ01V0DS