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NE3509M04 参数 Datasheet PDF下载

NE3509M04图片预览
型号: NE3509M04
PDF下载: 下载PDF文件 查看货源
内容描述: L到S波段低噪声放大器N沟道HJ -FET [L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET]
分类和应用: 晶体放大器晶体管光电二极管
文件页数/大小: 11 页 / 1257 K
品牌: CEL [ CALIFORNIA EASTERN LABS ]
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NE3509M04  
TYPICAL CHARACTERISTICS TA = +25 °C)  
DRAIN CURRENT vs. GATE to SOURCE VOLTAGE  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
Mounted on Glass Epoxy PCB  
(1.08 cm2 x 1.0mm(t) )  
DS  
V
=2V  
0
-1.0 -0.9 -0.8 -0.7 -0.6 -0.5 -0.4 -0.3 -0.2 -0.1 0.0  
Gate to Source Voltage VGS (V)  
Note) Under examination  
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE  
100  
MINIMUM NOISE FIGURE, ASSOCIATED GAIN  
vs. FREQUENCY  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
20  
18  
16  
14  
12  
10  
8
VDS=2V, ID=10mA  
80  
Ga  
VGS = 0 V  
60  
- 0.1 V  
40  
NFmin  
6
- 0.2 V  
4
20  
2
- 0.3 V  
0
- 0.4 V  
- 0.5 V  
0
5
10  
frequency (GHz)  
15  
0
5
0
2
3
4
1
Drain to Source Voltage VDS (V)  
MINIMUM NOISE FIGURE, ASSOCIATED GAIN  
vs. DREIN TO SOURCE VOLTAGE  
MINIMUM NOISE FIGURE, ASSOCIATED GAIN  
vs. DREIN CURRENT  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
20  
18  
16  
14  
12  
10  
8
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
20  
18  
16  
14  
12  
10  
8
Ga  
f=2.0GHz, VDS=2V  
Ga  
f=2.0GHz, IDS=10mA  
NFmin  
6
NFmin  
6
4
4
2
2
0
0
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
0
10  
20  
30  
40  
Drein to Source Voltage VDS (V)  
Drein Current ID (mA)