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NE3503M04 参数 Datasheet PDF下载

NE3503M04图片预览
型号: NE3503M04
PDF下载: 下载PDF文件 查看货源
内容描述: NEC的C TO Ku波段超低噪声,高增益放大器的N- CHANNER HJ -FET [NECs C TO Ku BAND SUPER LOW NOISE AND HIGH-GAIN AMPLIFIER N-CHANNER HJ-FET]
分类和应用: 晶体放大器晶体管光电二极管
文件页数/大小: 7 页 / 397 K
品牌: CEL [ CALIFORNIA EASTERN LABS ]
 浏览型号NE3503M04的Datasheet PDF文件第1页浏览型号NE3503M04的Datasheet PDF文件第2页浏览型号NE3503M04的Datasheet PDF文件第4页浏览型号NE3503M04的Datasheet PDF文件第5页浏览型号NE3503M04的Datasheet PDF文件第6页浏览型号NE3503M04的Datasheet PDF文件第7页  
NE3503M04  
TYPICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified)  
TOTAL POWER DISSIPATION  
vs. AMBIENT TEMPERATURE  
DRAIN CURRENT vs.  
DRAIN TO SOURCE VOLTAGE  
250  
200  
100  
80  
60  
40  
20  
150  
125  
100  
VGS = 0 V  
-0.2 V  
50  
0
-0.4 V  
-0.6 V  
50  
100 125 150  
200  
250  
0
1.0  
2.0  
Ambient Temperature TA (ºC)  
Drain to Source Voltage VDS (V)  
DRAIN CURRENT vs.  
GATE TO SOURCE VOLTAGE  
80  
60  
VDS = 2 V  
40  
20  
0
-2.0  
-1.0  
0
Gate to Source Voltage VGS (V)  
MINIMUM NOISE FIGURE,  
ASSOCIATED GAIN vs. DRAIN CURRENT  
MINIMUM NOISE FIGURE,  
ASSOCIATED GAIN vs. FREQUENCY  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
16  
14  
12  
10  
8
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
25  
20  
15  
10  
f = 12 GHz  
VDS = 2 V  
VDS = 2 V  
ID = 10 mA  
Ga  
Ga  
6
NFmin  
4
5
0
NFmin  
0.2  
0.0  
2
0
0.2  
0.0  
0
5
10  
15  
20  
25  
30  
0
2
4
6
8
10 12 14 16 18 20  
Drain Current ID (mA)  
Frequency f (GHz)