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NE3503M04 参数 Datasheet PDF下载

NE3503M04图片预览
型号: NE3503M04
PDF下载: 下载PDF文件 查看货源
内容描述: NEC的C TO Ku波段超低噪声,高增益放大器的N- CHANNER HJ -FET [NECs C TO Ku BAND SUPER LOW NOISE AND HIGH-GAIN AMPLIFIER N-CHANNER HJ-FET]
分类和应用: 晶体放大器晶体管光电二极管
文件页数/大小: 7 页 / 397 K
品牌: CEL [ CALIFORNIA EASTERN LABS ]
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NE3503M04  
RECOMMENDED OPERATING CONDITIONS (TA = +25°C)  
PARAMETER  
SYMBOL  
MIN.  
TYP.  
MAX.  
UNIT  
Drain to Source Voltage  
Drain Current  
VDS  
ID  
2
10  
3
15  
0
V
mA  
dBm  
Input Power  
Pin  
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
VGS = 3.0 V  
MIN.  
TYP.  
MAX.  
UNIT  
15  
Gate to Source Leak Current  
Saturated Drain Current  
Gate to Source Cutoff Voltage  
Transconductance  
IGSO  
IDSS  
VGS (off)  
gm  
0.5  
40  
10  
70  
μA  
mA  
V
VDS = 2 V, VGS = 0 V  
VDS = 2 V, ID = 100 μA  
0.2  
40  
0.7  
55  
2.0  
VDS = 2 V, ID = 10 mA  
mS  
dB  
dB  
Noise Figure  
NF  
VDS = 2 V, ID = 10 mA, f = 12 GHz  
0.55  
11.5  
0.75  
Associated Gain  
Ga  
10.5