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NDL5551P1 参数 Datasheet PDF下载

NDL5551P1图片预览
型号: NDL5551P1
PDF下载: 下载PDF文件 查看货源
内容描述: 1000至1600年纳米光纤通信50微米的InGaAs雪崩光电二极管模块 [1000 to 1600 nm OPTICAL FIBER COMMUNICATIONS 50 um InGaAs AVALANCHE PHOTO DIODE MODULE]
分类和应用: 光纤光电二极管光电二极管局域网通信
文件页数/大小: 5 页 / 48 K
品牌: CEL [ CALIFORNIA EASTERN LABS ]
 浏览型号NDL5551P1的Datasheet PDF文件第1页浏览型号NDL5551P1的Datasheet PDF文件第2页浏览型号NDL5551P1的Datasheet PDF文件第4页浏览型号NDL5551P1的Datasheet PDF文件第5页  
NDL5551P SERIES  
TYPICAL PERFORMANCE CURVES (TC = 25°C, unless otherwise specified)  
TEMPERATURE DEPENDENCE OF  
DARK CURRENT and MULTIPLIED  
DARK CURRENT  
MULTIPLICATION FACTOR vs.  
REVERSE VOLTAGE  
10-6  
10-7  
103  
λ = 1300 nm  
ID @ VR = 0.9 V(BR)R  
TC = 65°C  
102  
10-8  
TC = -20°C  
10-9  
I
DM  
TC = 25°C  
101  
10-10  
TC = 85°C  
10-11  
-60  
100  
0
20  
40  
60  
80  
100  
-40  
-20  
0
20  
40  
60  
80  
100  
Operating Case Temperature, TC (ºC)  
Reverse Voltage, VR (V)  
CUT-OFF FREQUENCY vs.  
MULTIPLICATION FACTOR  
FREQUENCY RESPONSE  
10  
TC = 25°C  
λ = 1300 nm  
= 50Ω  
M = 8  
= 25°C  
R
L
T
C
1
0.1  
0
1.0  
2.0  
3.0  
4.0  
5.0  
1
10  
100  
Frequency, f (GHz)  
Multiplication Factor, M  
TERMINAL CAPACITANCE vs.  
REVERSE VOLTAGE  
EXCESS NOISE FACTOR vs.  
MULTIPLICATION FACTOR  
100  
50  
1300 nm ( ), 1550 nm (  
f = 35 MHz, B = 1 MHz  
)
2
1
0.5  
0.4  
20  
10  
5
0.5  
0.2  
0.1  
2
1
1
2
5
10  
20  
50  
100  
1
2
5
10  
20  
50  
100  
Reverse Voltage, VR (V)  
Multiplication Factor, M