1000 to 1600 nm OPTICAL
FIBER COMMUNICATIONS
φ50 µm
InGaAs
AVALANCHE PHOTO DIODE MODULE
FEATURES
•
SMALLER DARK CURRENT:
I
D
= 5 nA
•
HIGH QUANTUM EFFICIENCY:
η
= 90% at
λ
= 1300 nm, M = 1
η
= 77% at
λ
= 1550 nm, M = 1
•
HIGH SPEED RESPONSE:
f
C
= 1.2 GHz @ M = 20
•
DETECTING AREA SIZE:
φ
50
µm
•
COAXIAL MODULE WITH MULTIMODE FIBER:
GI-50/125
NDL5551P
SERIES
DESCRIPTION
The NDL5551P Series are InGaAs PIN photo diode modules
with multimode fiber. They are designed for detectors of long
wavelength transmission systems and cover the wavelength
range setween 1000 and 1600 nm.
ELECTRO-OPTICAL CHARACTERISTICS
(T
C
= 25°C)
PART NUMBER
SYMBOLS
V
(BR)R
δ
1
I
D
I
DM
C
t
f
C
η
S
M
x
F
Note:
PARAMETERS AND CONDITIONS
Reverse Breakdown Voltage, I
D
=100
µA
Temperature Coefficient of Reverse Breakdown Voltage
Dark Current, V
R
= V
(BR)R
x 0.9
Multiplied Dark Current, M = 2 to 10
Terminal Capacitance, V
R
= V
(BR)R
x 0.9, f = 1 MHz
Cut-off Frequency, M = 10
M = 20
Quantum Efficiency,
λ
= 1300 nm, M = 1
λ
= 1550 nm, M = 1
Responsivity,
λ
= 1300 nm
λ
= 1550 nm
Multiplication Factor,
λ
= 1300 nm, I
PO
= 1.0
µA
V
R
= V (@I
D
= 1
µA)
Excess Noise Exponent,
λ
= 1300 nm, 1550 nm,
I
PO
=1.0
µA,
M = 10, f = 35 MHz, B = 1 MHz
Excess Noise Factor,
λ
= 1300 nm, 1550 nm,
I
PO
=1.0
µA,
M = 10, f = 35 MHz, B = 1 MHz
UNITS
V
%/ºC
nA
nA
pF
GHz
%
A/W
1
76
65
0.8
0.81
30
MIN
50
NDL5551P Series
TYP
70
0.2
5
1
0.4
1.5
1.2
90
77
0.94
0.96
40
0.7
5
30
5
0.75
MAX
100
1.
δ
=
V
(BR)R
< 25°C +
∆T°C
> - V
(BR)R
<25°C>
∆T°C •
V
(BR)R
<25°C>
California Eastern Laboratories
CEL [ CALIFORNIA EASTERN LABS ]
