BSI
BS616LV2015
ABSOLUTE MAXIMUM RATINGS(1)
OPERATING RANGE
SYMBOL
PARAMETER
RATING
UNITS
AMBIENT
TEMPERATURE
0 O C to +70 O
RANGE
Vcc
Terminal Voltage with
-0.5 to
V
TERM
BIAS
STG
T
V
T
T
P
Respect to GND
Vcc+0.5
Commercial
Industrial
C
4.5V ~ 5.5V
4.5V ~ 5.5V
Temperature Under Bias
Storage Temperature
Power Dissipation
-40 to +125
-60 to +150
1.0
O C
O C
W
-40 O C to +85O
C
CAPACITANCE (1) (TA = 25oC, f = 1.0 MHz)
DC Output Current
20
mA
OUT
I
SYMBOL
PARAMETER
CONDITIONS
MAX. UNIT
Input
1. Stresses greater than those listed under ABSOLUTE MAXIMUM
RATINGS may cause permanent damage to the device. This is a
stress rating only and functional operation of the device at these
or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
reliability.
IN
C
IN
V
=0V
6
8
pF
pF
Capacitance
Input/Output
Capacitance
DQ
C
I/O
V
=0V
1. This parameter is guaranteed and not tested.
DC ELECTRICAL CHARACTERISTICS ( TA = 0 to + 70oC )
PARAMETER
UNITS
PARAMETER
TEST CONDITIONS
MIN. TYP. (1) MAX.
NAME
Guaranteed Input Low
Vcc=5.0V
Vcc=5.0V
VIL
-0.5
--
0.8
V
Voltage(2)
Guaranteed Input High
Voltage(2)
VIH
IIL
2.2
--
--
--
Vcc+0.2
1
V
Input Leakage Current
Vcc = Max, VIN = 0V to Vcc
uA
Vcc = Max, CE = VIH, or OE = VIH
,
IOL
Output Leakage Current
--
--
1
uA
V
I/O = 0V to Vcc
Vcc=5.0V
Vcc=5.0V
VOL
VOH
Output Low Voltage
Output High Voltage
Vcc = Max, IOL = 2mA
Vcc = Min, IOH = -1mA
--
--
--
0.4
--
V
V
2.4
Operating Power Supply
Current
Vcc=5.0V
Vcc=5.0V
Vcc=5.0V
ICC
CE = VIL, IDQ = 0mA, F = Fmax(3)
--
--
--
--
--
40
1
mA
mA
uA
ICCSB
Standby Current-TTL
CE = VIH, IDQ = 0mA
CE Њ Vcc-0.2V,
ICCSB1
Standby Current-CMOS
0.6
6
V
IN Њ Vcc - 0.2V or VIN Љ 0.2V
o
1. Typical characteristics are at TA = 25 C.
2. These are absolute values with respect to device ground and all overshoots due to system or tester notice are included.
3. Fmax = 1/tRC
.
DATA RETENTION CHARACTERISTICS ( TA = 0 to + 70oC )
(1)
SYMBOL
PARAMETER
TEST CONDITIONS
MIN. TYP.
MAX.
UNITS
CE
Vcc - 0.2V
Њ
Њ
VDR
Vcc for Data Retention
1.5
--
0.05
--
V
IN
IN
V
Vcc - 0.2V or V
0.2V
Љ
Љ
CE
Vcc - 0.2V
Vcc - 0.2V or V
Њ
Њ
ICCDR
Data Retention Current
--
0
1.5
uA
IN
IN
V
0.2V
Chip Deselect to Data
Retention Time
tCDR
tR
--
--
--
--
ns
ns
See Retention Waveform
(2)
Operation Recovery Time
TRC
O
1. Vcc = 1.5V, TA = + 25 C
2. tRC = Read Cycle Time
Revision 2.5
April 2002
R0201-BS616LV2015
3