BSI
BS616LV2021
DATA RETENTION CHARACTERISTICS ( TA = 0 to + 70oC )
(1)
SYMBOL
PARAMETER
TEST CONDITIONS
MIN. TYP.
MAX.
UNITS
CE1
VIN
Vcc - 0.2V or CE2
0.2V or
Њ
Љ
0.2V
V
VDR
Vcc for Data Retention
1.5
--
--
Vcc - 0.2V or VIN
Њ
Љ
CE1
VIN
Vcc - 0.2V or CE2
0.2V
Њ
Љ
0.2V
ICCDR
Data Retention Current
--
0
0.05
0.5
uA
Vcc - 0.2V or VIN
Њ
Љ
Chip Deselect to Data
Retention Time
tCDR
--
--
--
--
ns
ns
See Retention Waveform
(2)
tR
Operation Recovery Time
TRC
O
1. Vcc = 1.5V, TA = + 25 C
2. tRC = Read Cycle Time
LOW VCC DATA RETENTION WAVEFORM (1) ( CE1 Controlled )
Data Retention Mode
DR Њ 1.5V
V
Vcc
Vcc
t
Vcc
CE1
R
t
CDR
CE1 Њ Vcc - 0.2V
VIH
VIH
LOW VCC DATA RETENTION WAVEFORM (2) ( CE2 Controlled )
Data Retention Mode
DR Њ 1.5V
V
Vcc
Vcc
t
Vcc
CE2
R
t
CDR
CE2 Љ 0.2V
VIL
VIL
Revision 2.4
April 2002
R0201-BS616LV2021
5
BSI [ BRILLIANCE SEMICONDUCTOR ]
