BSI
BS616LV2020
DC ELECTRICAL CHARACTERISTICS (TA = 0oC to +70oC)
PARAMETER
(1)
PARAMETER
TEST CONDITIONS
MIN. TYP. MAX. UNITS
NAME
Guaranteed Input Low
Vcc=3.0V
Vcc=3.0V
IL
V
-0.5
2.0
--
--
0.8
V
V
(2)
Voltage
Guaranteed Input High
VIH
Vcc+0.2
(2)
Voltage
Input Leakage Current
Output Leakage Current
Vcc = Max, VIN = 0V to Vcc
Vcc = Max, CE1=V or CE2=VIL or OE = VIH, VI/O
IL
I
I
--
--
--
--
1
1
uA
uA
=
IH
OL
0V to Vcc
Vcc=3.0V
Vcc=3.0V
Output Low Voltage
Output High Voltage
Vcc = Max, IOL = 2mA
OL
V
--
--
--
0.4
--
V
V
OH
Vcc = Min, I = -1mA
OH
V
2.4
Operating Power Supply Vcc = Max, CE1= VIL, CE2=VIH
Vcc=3.0V
Vcc=3.0V
ICC
--
--
--
--
30
1
mA
mA
(3)
DQ
Current
I
= 0mA, F =Fmax
Vcc = Max, CE1 = V or CE2=VIL
IH
Standby CurrentΓTL
ICCSB
DQ
I
= 0mA
Њ
Vcc = Max, CE1 Vcc-0.2V or
CE2 0.2V, Other inputs Vcc - 0.2V
INЉ
or V 0.2V
Њ
Љ
Vcc=3.0V
Standby CurrentΓMOS
CCSB1
I
--
0.5
8
uA
o
1. Typical characteristics are at TA = 25 C.
2. These are absolute values with respect to device ground and all overshoots due to system or tester notice are included.
3. Fmax = 1/tRC
.
Revision 2.3
April 2002
R0201-BS616LV2020
4
BSI [ BRILLIANCE SEMICONDUCTOR ]
