BSI
BS616LV2020
PIN DESCRIPTIONS
Name
Function
A0-A16 Address Input
These 17 address inputs select one of the 131,072 x 16-bit words in the RAM.
SAE Address Input
This address input incorporates with the above17 address input select one of the
262,144 x 8-bit bytes in the RAM if the CIO is LOW. Don't use when CIO is HIGH.
CIO x8/x16 select input
This input selects the organization of the SRAM. 131,072 x 16-bit words configuration
is selected if CIO is HIGH. 262,144 x 8-bit bytes configuration is selected if CIO is
LOW.
CE1 Chip Enable 1 Input
CE2 Chip Enable 2 Input
CE1 is active LOW and CE2 is active HIGH. Both chip enables must be active when
data read from or write to the device. If either chip enable is not active, the device is
deselected and is in a standby power mode. The DQ pins will be in the high
impedance state when the device is deselected.
WE Write Enable Input
OE Output Enable Input
The write enable input is active LOW and controls read and write operations. With the
chip selected, when WE is HIGH and OE is LOW, output data will be present on the
DQ pins; when WE is LOW, the data present on the DQ pins will be written into the
selected memory location.
The output enable input is active LOW. If the output enable is active while the chip is
selected and the write enable is inactive, data will be present on the DQ pins and they
will be enabled. The DQ pins will be in the high impedance state when OE is inactive.
Lower byte and upper byte data input/output control pins. The chip is deselected when
both LB and UB pins are HIGH.
LB and UB Data Byte Control Input
D0 - D15 Data Input/Output Ports
These 16 bi-directional ports are used to read data from or write data into the RAM.
Vcc
Power Supply
Ground
Gnd
Revision 2.3
R0201-BS616LV2020
2
April 2002
BSI [ BRILLIANCE SEMICONDUCTOR ]
