BS616LV2019
BSI
AC ELECTRICAL CHARACTERISTICS ( TA = -40 to + 85oC )
WRITE CYCLE (48B BGA ignore CE2 condition)
JEDEC
PARAMETER
NAME
CYCLE TIME : 70ns
CYCLE TIME : 55ns
(Vcc = 2.7~3.6V)
PARAMETER
(Vcc = 2.7~3.6V)
DESCRIPTION
Write Cycle Time
UNIT
NAME
MIN. TYP. MAX.
MIN. TYP. MAX.
tAVAX
tE1LWH
tAVWL
tAVWH
tWLWH
tWHAX
tBW
55
55
0
--
--
--
--
--
--
--
--
--
--
--
--
--
70
70
0
--
--
--
--
--
--
--
--
--
--
--
--
--
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
tWC
tCW
tAS
Chip Select to End of Write
Address Setup Time
(CE,CE2)
--
--
Address Valid to End of Write
Write Pulse Width
55
30
0
--
70
35
0
--
tAW
tWP
tWR
--
--
Write recovery Time
--
--
(CE,CE2,WE)
(LB,UB)
(1)
Date Byte Control to End of Write
Write to Output in High Z
Data to Write Time Overlap
Data Hold from Write Time
Output Disable to Output in High Z
25
--
--
30
--
--
tBW
tWHZ
tDW
tDH
tWLQZ
tDVWH
tWHDX
tGHQZ
25
--
30
--
25
0
30
0
--
--
--
25
--
30
tOHZ
tWHOX
tOW
End of Write to Output Active
5
--
--
5
--
--
ns
NOTE :
1. tBW is 25ns/30ns (@speed=55ns/70ns) with address toggle. ; tBW is 55ns/70ns (@speed=55ns/70ns) without address toggle.
SWITCHING WAVEFORMS (WRITE CYCLE)
WRITE CYCLE1 (1)
t
WC
ADDRESS
OE
(3)
WR
t
(5,12)
(5)
CE2
CE
(11)
CW
t
t
BW
(5)
LB,UB
t
AW
(3)
t
WP
(2)
t
AS
WE
(4,10)
t
OHZ
D OUT
t
DH
t
DW
D IN
Revision 1.2
May 2004
R0201-BS616LV2019
6
BSI [ BRILLIANCE SEMICONDUCTOR ]
