BS616LV2013
BSI
ABSOLUTE MAXIMUM RATINGS(1)
OPERATING RANGE
AMBIENT
SYMBOL
PARAMETER
RATING
UNITS
RANGE
Vcc
TEMPERATURE
Terminal Voltage with
-0.5 to
V
TERM
BIAS
STG
T
V
T
T
P
Respect to GND
Vcc+0.5
Commercial
Industrial
0 O C to +70O
-40 O C to +85O
C
2.4V ~ 3.6V
2.4V ~ 3.6V
Temperature Under Bias
Storage Temperature
Power Dissipation
-40 to +125
-60 to +150
1.0
O C
O C
W
C
CAPACITANCE (1) (TA = 25oC, f = 1.0 MHz)
DC Output Current
20
mA
OUT
I
SYMBOL
PARAMETER
CONDITIONS
MAX. UNIT
Input
IN
C
IN
V
=0V
6
8
pF
pF
1. Stresses greater than those listed under ABSOLUTE MAXIMUM
RATINGS may cause permanent damage to the device. This is a
stress rating only and functional operation of the device at these
or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
reliability.
Capacitance
Input/Output
Capacitance
CDQ
VI/O=0V
1. This parameter is guaranteed and not tested.
DC ELECTRICAL CHARACTERISTICS ( TA = 0 to + 70oC )
PARAMETER
(1)
UNITS
PARAMETER
TEST CONDITIONS
MIN. TYP.
MAX.
NAME
Guaranteed Input Low
Vcc=3.0V
Vcc=3.0V
VIL
-0.5
--
0.8
V
Voltage(2)
Guaranteed Input High
Voltage(2)
VIH
IIL
2.0
--
--
--
Vcc+0.2
1
V
Input Leakage Current
Vcc = Max, VIN = 0V to Vcc
Vcc = Max, CE = VIH, or OE = VIH
uA
,
IOL
Output Leakage Current
--
--
1
uA
V
I/O = 0V to Vcc
Vcc=3.0V
Vcc=3.0V
VOL
VOH
Output Low Voltage
Output High Voltage
Vcc = Max, IOL = 2mA
Vcc = Min, IOH = -1mA
--
--
--
0.4
--
V
V
2.4
Operating Power Supply
Current
Vcc=3.0V
Vcc=3.0V
Vcc=3.0V
ICC
CE = VIL, IDQ = 0mA, F = Fmax(3)
--
--
--
--
--
20
1
mA
mA
uA
ICCSB
Standby Current-TTL
CE = VIH, IDQ = 0mA
CE Њ Vcc-0.2V,
ICCSB1
Standby Current-CMOS
0.1
0.7
V
IN Њ Vcc - 0.2V or VIN Љ 0.2V
o
1. Typical characteristics are at TA = 25 C.
2. These are absolute values with respect to device ground and all overshoots due to system or tester notice are included.
3. Fmax = 1/tRC
.
DATA RETENTION CHARACTERISTICS ( TA = 0 to + 70oC )
SYMBOL
PARAMETER
TEST CONDITIONS
MIN.
TYP.(1)
MAX.
UNITS
CE Њ Vcc - 0.2V
VIN Њ Vcc - 0.2V or VIN Љ 0.2V
VDR
Vcc for Data Retention
1.5
--
--
V
CE Њ Vcc - 0.2V
ICCDR
Data Retention Current
--
0
0.05
0.5
uA
VIN Њ Vcc - 0.2V or VIN Љ 0.2V
Chip Deselect to Data
Retention Time
Operation Recovery Time
tCDR
tR
--
--
--
--
ns
ns
See Retention Waveform
(2)
TRC
O
1. Vcc = 1.5V, TA = + 25 C
2. tRC = Read Cycle Time
Revision 2.5
April 2002
R0201-BS616LV2013
3
BSI [ BRILLIANCE SEMICONDUCTOR ]
