BSI
BS616LV1626
DATA RETENTION CHARACTERISTICS ( TA = -40oC to +85oC )
SYMBOL
PARAMETER
TEST CONDITIONS
MIN.
TYP.(1)
MAX.
UNITS
CE1 ≧ Vcc - 0.2V or CE2 ≦ 0.2V or
LB ≧ Vcc - 0.2V and UB ≧ Vcc - 0.2V
VIN ≧ Vcc - 0.2V or VIN ≦ 0.2V
V
VDR
Vcc for Data Retention
1.5
--
--
CE1 ≧ Vcc - 0.2V or CE2 ≦ 0.2V or
LB ≧ Vcc - 0.2V and UB ≧ Vcc - 0.2V
VIN ≧ Vcc - 0.2V or VIN ≦ 0.2V
(3)
ICCDR
Data Retention Current
--
0
1.5
5
uA
Chip Deselect to Data
Retention Time
tCDR
--
--
--
--
ns
ns
See Retention Waveform
(2)
tR
Operation Recovery Time
TRC
1. Vcc = 1.5V, TA = + 25OC
2. tRC = Read Cycle Time
3. IccDR(Max.) is 2.5uA at TA=70OC.
LOW VCC DATA RETENTION WAVEFORM (1) ( CE1 Controlled )
Data Retention Mode
DR ≧ 1.5V
V
Vcc
Vcc
Vcc
CE1
t
R
t
CDR
CE1 ≧ Vcc - 0.2V
VIH
VIH
LOW VCC DATA RETENTION WAVEFORM (2) ( CE2 Controlled )
Data Retention Mode
DR ≧ 1.5V
V
Vcc
Vcc
Vcc
CE2
t
R
t
CDR
CE2 ≦ 0.2V
VIL
VIL
Revision 2.1
R0201-BS616LV1626
5
Jan.
2004
BSI [ BRILLIANCE SEMICONDUCTOR ]
