BSI
BS616LV1626
DC ELECTRICAL CHARACTERISTICS ( TA = -40oC to + 85oC )
PARAMETER
(1)
UNITS
PARAMETER
TEST CONDITIONS
MIN. TYP.
MAX.
0.8
NAME
Guaranteed Input Low
--
--
--
--
-0.5
2.2
--
Vcc=5V
Vcc=5V
VIL
V
(3)
Voltage
Guaranteed Input High
VIH
IIL
Vcc+0.3
V
(3)
Voltage
IN
Input Leakage Current
Output Leakage Current
Vcc = Max, V = 0V to Vcc
1
1
uA
uA
ViL, or
Vcc = Max, CE1 = VIH, or CE2 =
ILO
--
IH
I/O
OE = V , V = 0V to Vcc
Vcc=5V
Vcc=5V
--
VOL
VOH
--
--
OL
Output Low Voltage
Output High Voltage
Vcc = Max, I = 2mA
0.4
--
V
V
OH
Vcc = Min, I = -1mA
2.4
(4)
55ns
70ns
--
--
--
--
115
92
IL
Operating Power Supply CE1 = V and CE2 =
Current
V
IH
ICC
Vcc=5V
Vcc=5V
mA
mA
(2)
DQ
, I = 0mA, F =Fmax
CE1 = VIH or CE2 =V
, I = 0mA
IL
--
--
ICCSB
Standby Current-TTL
2.5
DQ
≧
CE1 Vcc-0.2V, or
(5)
Vcc=5V
≧
--
ICCSB1
≦
Vcc - 0.2V
Standby Current-CMOS
CE2 0.2V, VIN
15
220
uA
≦
or VIN 0.2V
1. Typical characteristics are at TA = 25oC.
2. Fmax = 1/tRC .
3. These are absolute values with respect to device ground and all overshoots due to system or tester notice are included.
4. Icc_Max. is 113mA(@55ns) / 90mA(@70ns) during 0~70oC operation.
5. IccsB1 is 110uA at Vcc=5.0V and TA=70oC.
Revision 2.1
Jan. 2004
R0201-BS616LV1626
4
BSI [ BRILLIANCE SEMICONDUCTOR ]
