BH62UV4000
n DC ELECTRICAL CHARACTERISTICS (TA = -40OC to +85OC)
PARAMETER
PARAMETER
Power Supply
TEST CONDITIONS
MIN.
1.65
TYP.(1)
MAX.
UNITS
V
NAME
VCC
--
--
--
--
--
--
--
--
3.6
0.4
0.8
VCC=1.8V
VCC=3.6V
VCC=1.8V
VCC=3.6V
-0.3(2)
V
VIL
VIH
Input Low Voltage
1.4
2.2
Input High Voltage
VCC+0.3(3)
V
VIN = 0V to VCC
,
IIL
Input Leakage Current
Output Leakage Current
Output Low Voltage
Output High Voltage
--
--
--
1
1
uA
uA
V
CE = VIH
VI/O = 0V to VCC,
CE = VIH or OE = VIH
ILO
VCC = Max, IOL = 0.1mA
VCC = Max, IOL = 2.0mA
VCC = Min, IOH = -0.1mA
VCC = Min, IOH = -1.0mA
CE = VIL,
0.2
0.4
VCC=1.8V
VCC=3.6V
VCC=1.8V
VCC=3.6V
VCC=1.8V
VCC=3.6V
VCC=1.8V
VCC=3.6V
VCC=1.8V
VCC=3.6V
VCC=1.8V
VCC=3.6V
VOL
VOH
ICC
VCC-0.2
2.4
--
V
8
Operating Power Supply
Current
--
--
--
--
mA
mA
mA
uA
(4)
IDQ = 0mA, f = FMAX
10
CE = VIL,
1.0
1.5
1.5
2.0
0.5
1.0
10
Operating Power Supply
Current
ICC1
ICCSB
ICCSB1
IDQ = 0mA, f = 1MHz
CE = VIH,
IDQ = 0mA
Standby Current – TTL
--
CE≧VCC-0.2V,
2.0
2.0(5)
Standby Current – CMOS
VIN≧VCC-0.2V or VIN≦0.2V
10
1. Typical characteristics are at TA=25OC and not 100% tested.
2. Undershoot: -1.0V in case of pulse width less than 20 ns.
3. Overshoot: VCC+1.0V in case of pulse width less than 20 ns.
4. FMAX=1/tRC.
5. VCC=3.0V
n DATA RETENTION CHARACTERISTICS (TA = -40OC to +85OC)
SYMBOL
VDR
PARAMETER
VCC for Data Retention
Data Retention Current
TEST CONDITIONS
MIN.
1.0
--
TYP. (1)
MAX.
UNITS
CE≧VCC-0.2V,
--
1.0
--
--
5.0
--
V
VIN≧VCC-0.2V or VIN≦0.2V
CE≧VCC-0.2V,
ICCDR
tCDR
uA
ns
ns
VCC=1.2V
VIN≧VCC-0.2V or VIN≦0.2V
Chip Deselect to Data
Retention Time
0
See Retention Waveform
(2)
tR
Operation Recovery Time
tRC
--
--
1. Typical characteristics are at TA=25OC and not 100% tested.
2. tRC = Read Cycle Time.
n LOW VCC DATA RETENTION WAVEFORM (1) (CE Controlled)
Data Retention Mode
V
DR≧1.0V
VCC
VCC
tR
VCC
tCDR
CE≧VCC - 0.2V
VIH
VIH
CE
Revision 1.2
Aug. 2006
R0201-BH62UV4000
3
BSI [ BRILLIANCE SEMICONDUCTOR ]
