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BH62UV4000DIG55 参数 Datasheet PDF下载

BH62UV4000DIG55图片预览
型号: BH62UV4000DIG55
PDF下载: 下载PDF文件 查看货源
内容描述: 超低功耗/高速CMOS SRAM 512K ×8位 [Ultra Low Power/High Speed CMOS SRAM 512K X 8 bit]
分类和应用: 静态存储器
文件页数/大小: 12 页 / 397 K
品牌: BSI [ BRILLIANCE SEMICONDUCTOR ]
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BH62UV4000  
n PIN DESCRIPTIONS  
Name  
Function  
These 19 address inputs select one of the 524,288 x 8 bit in the RAM  
A0-A18 Address Input  
CE is active LOW. Chip enable must be active when data read from or write to the  
device. If chip enable is not active, the device is deselected and is in standby power  
mode. The DQ pins will be in the high impedance state when the device is deselected.  
The write enable input is active LOW and controls read and write operations. With the  
chip selected, when WE is HIGH and OE is LOW, output data will be present on the  
DQ pins; when WE is LOW, the data present on the DQ pins will be written into the  
selected memory location.  
CE Chip Enable 1 Input  
WE Write Enable Input  
OE Output Enable Input  
The output enable input is active LOW. If the output enable is active while the chip is  
selected and the write enable is inactive, data will be present on the DQ pins and they  
will be enabled. The DQ pins will be in the high impendence state when OE is inactive.  
8 bi-directional ports are used to read data from or write data into the RAM.  
DQ0-DQ7 Data Input/Output  
Ports  
VCC  
Power Supply  
Ground  
VSS  
n TRUTH TABLE  
MODE  
I/O OPERATION  
VCC CURRENT  
CE  
WE  
OE  
Chip De-selected  
(Power Down)  
H
X
X
High Z  
ICCSB, ICCSB1  
Output Disabled  
Read  
L
L
L
H
H
L
H
L
High Z  
DOUT  
DIN  
ICC  
ICC  
ICC  
Write  
X
NOTES: H means VIH; L means VIL; X means dont care (Must be VIH or VIL state)  
n ABSOLUTE MAXIMUM RATINGS (1)  
n OPERATING RANGE  
AMBIENT  
TEMPERATURE  
-40OC to + 85OC  
SYMBOL  
PARAMETER  
RATING  
UNITS  
RANG  
VCC  
Terminal Voltage with  
Respect to GND  
VTERM  
-0.5(2) to 4.6V  
V
Industrial  
1.65V ~ 3.6V  
Temperature Under  
Bias  
TBIAS  
TSTG  
PT  
-40 to +125  
-60 to +150  
1.0  
OC  
OC  
W
n CAPACITANCE (1) (TA = 25OC, f = 1.0MHz)  
Storage Temperature  
Power Dissipation  
DC Output Current  
SYMBOL PAMAMETER CONDITIONS MAX. UNITS  
IOUT  
20  
mA  
Input  
Capacitance  
CIN  
CIO  
VIN = 0V  
VI/O = 0V  
6
8
pF  
pF  
1. Stresses greater than those listed under ABSOLUTE  
MAXIMUM RATINGS may cause permanent damage to the  
device. This is a stress rating only and functional operation of  
the device at these or any other conditions above those  
indicated in the operational sections of this specification is not  
implied. Exposure to absolute maximum rating conditions for  
extended periods may affect reliability.  
Input/Output  
Capacitance  
1. This parameter is guaranteed and not 100% tested.  
2. 2.0V in case of AC pulse width less than 30 ns  
Revision 1.2  
Aug. 2006  
R0201-BH62UV4000  
2