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BH62UV1601AIG70 参数 Datasheet PDF下载

BH62UV1601AIG70图片预览
型号: BH62UV1601AIG70
PDF下载: 下载PDF文件 查看货源
内容描述: [Standard SRAM, 2MX8, 70ns, CMOS, PBGA48, 6 X 8 MM, GREEN, BGA-48]
分类和应用: 静态存储器内存集成电路
文件页数/大小: 9 页 / 215 K
品牌: BSI [ BRILLIANCE SEMICONDUCTOR ]
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BH62UV1601  
„ SWITCHING WAVEFORMS (READ CYCLE)  
READ CYCLE 1 (1,2,4)  
tRC  
ADDRESS  
t
AA  
tOH  
tOH  
DOUT  
READ CYCLE 2 (1,3,4)  
CE1  
tACS1  
CE2  
DOUT  
tACS2  
(5)  
tCHZ1, tCHZ2  
(5)  
tCLZ  
READ CYCLE 3 (1, 4)  
ADDRESS  
tRC  
t
AA  
OE  
tOH  
tOE  
tOLZ  
CE1  
(5)  
(5)tACS1  
tOH(1Z,5)  
tCLZ1  
tCHZ1  
CE2  
DOUT  
tACS2  
(2,5)  
tCHZ2  
(5)  
tCLZ2  
NOTES:  
1. WE is high in read Cycle.  
2. Device is continuously selected when CE1 = VIL and CE2= VIH.  
3. Address valid prior to or coincident with CE1 transition low and/or CE2 transition high.  
4. OE = VIL.  
5. Transition is measured ± 500mV from steady state with CL = 5pF.  
The parameter is guaranteed but not 100% tested.  
Revision  
Oct.,  
1.2  
R0201-BH62UV1601  
5
2008