BH62UV1601
DC ELECTRICAL CHARACTERISTICS (TA = -40OC to +85OC)
PARAMETER
PARAMETER
TEST CONDITIONS
MIN.
1.65
TYP.(1)
MAX.
UNITS
V
NAME
VCC
Power Supply
--
--
--
--
--
--
--
3.6
0.4
0.8
VCC=1.8V
VCC=3.6V
VCC=1.8V
VCC=3.6V
Input Low Voltage
-0.3(2)
V
VIL
VIH
1.4
2.2
Input High Voltage
V
CC+0.3(3)
V
VIN = 0V to VCC
,
IIL
Input Leakage Current
Output Leakage Current
Output Low Voltage
Output High Voltage
--
--
--
1
1
uA
uA
V
CE1 = VIH or CE2 = VIL
VI/O = 0V to VCC,
ILO
CE1 = VIH or CE2 = VIL or OE = VIH
VCC = Max, IOL = 0.1mA
VCC = Max, IOL = 2.0mA
VCC = Min, IOH = -0.1mA
VCC = Min, IOH = -1.0mA
CE1 = VIL, CE2 = VIH,
0.2
0.4
VCC=1.8V
VCC=3.6V
VOL
VOH
ICC
VCC-0.2
2.4
V
V
CC=1.8V
CC=3.6V
--
V
6
8
1.0
1.5
8
12
Operating Power Supply
Current
VCC=1.8V
VCC=3.6V
VCC=1.8V
VCC=3.6V
VCC=1.8V
VCC=3.6V
VCC=1.8V
VCC=3.6V
--
--
--
--
mA
mA
mA
uA
(4)
IDQ = 0mA, f = FMAX
CE1 = VIL and CE2 = VIH,
IDQ = 0mA, f = 1MHz
1.5
2.0
0.5
1.0
25
Operating Power Supply
Current
ICC1
ICCSB
ICCSB1
CE1 = VIH, or CE2 = VIL,
IDQ = 0mA
Standby Current – TTL
--
CE1≧VCC-0.2V or CE2≦0.2V,
IN≧VCC-0.2V or VIN≦0.2V
5.0
Standby Current – CMOS
5.0(5)
30
V
1. Typical characteristics are at TA=25OC and not 100% tested.
2. Undershoot: -1.0V in case of pulse width less than 20 ns.
3. Overshoot: VCC+1.0V in case of pulse width less than 20 ns.
4. FMAX=1/tRC.
5. at VCC=3.0V at TA=25OC.
DATA RETENTION CHARACTERISTICS (TA = -40OC to +85OC)
SYMBOL
VDR
PARAMETER
TEST CONDITIONS
MIN.
TYP. (1)
MAX.
UNITS
CE1≧VCC-0.2V or CE2≦0.2V,
VIN≧VCC-0.2V or VIN≦0.2V
CE1≧VCC-0.2V or CE2≦0.2V,
VIN≧VCC-0.2V or VIN≦0.2V
VCC for Data Retention
1.0
--
--
V
ICCDR
Data Retention Current
--
0
2.5
15
uA
VCC=1.2V
Chip Deselect to Data
Retention Time
tCDR
tR
--
--
--
--
ns
ns
See Retention Waveform
(2)
Operation Recovery Time
tRC
1. Typical characteristics are at TA=25OC and not 100% tested.
2. tRC = Read Cycle Time.
LOW VCC DATA RETENTION WAVEFORM (1) (CE1 Controlled)
Data Retention Mode
DR≧1.0V
V
VCC
tCDR
VCC
tR
VCC
CE1≧VCC - 0.2V
VIH
VIH
CE1
Revision
Oct.,
1.2
R0201-BH62UV1601
3
2008
BSI [ BRILLIANCE SEMICONDUCTOR ]
