BH616UV8011
AC ELECTRICAL CHARACTERISTICS (TA = -40OC to +85OC)
READ CYCLE
CYCLE TIME : 55ns CYCLE TIME : 70ns
(Vcc=3.0V) (Vcc=1.8V)
MIN. TYP. MAX. MIN. TYP. MAX.
JEDEC
PARANETER
PARAMETER
NAME
DESCRIPTION
Read Cycle Time
UNITS
NAME
tAVAX
tAVQX
tE1LQV
tE2LQV
tBLQV
tGLQV
tE1LQX
tE2LQX
tBLQX
tGLQX
tE1HQZ
tE2HQZ
tBHQZ
tGHQZ
tAVQX
tRC
tAA
55
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
55
55
55
55
30
--
70
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
70
70
70
70
35
--
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Address Access Time
Chip Select Access Time
(CE1)
tACS1
tACS2
tBA
--
--
Chip Select Access Time
(CE2)
--
--
Data Byte Control Access Time
(LB, UB)
--
--
tOE
Output Enable to Output Valid
Chip Select to Output Low Z
--
--
(CE1)
(CE2)
tCLZ1
tCLZ2
tBE
10
10
10
5
10
10
10
5
Chip Select to Output Low Z
--
--
Data Byte Control to Output Low Z (LB, UB)
--
--
tOLZ
tCHZ1
tCHZ2
tBDO
tOHZ
tOH
Output Enable to Output Low Z
--
--
Chip Select to Output High Z
Chip Select to Output High Z
(CE1)
(CE2)
--
25
25
25
25
--
--
30
30
30
30
--
--
--
Data Byte Control to Output High Z (LB, UB)
--
--
Output Enable to Output High Z
Data Hold from Address Change
--
--
10
10
SWITCHING WAVEFORMS (READ CYCLE)
READ CYCLE 1 (1,2,4)
tRC
ADDRESS
tAA
tOH
tOH
DOUT
Revision
Oct.
1.2
R0201-BH616UV8011
5
2008
BSI [ BRILLIANCE SEMICONDUCTOR ]
