BH616UV8011
ABSOLUTE MAXIMUM RATINGS (1)
OPERATING RANGE
AMBIENT
TEMPERATURE
SYMBOL
PARAMETER
RATING
-0.5(2) to 4.6V
UNITS
RANG
VCC
Terminal Voltage with
Industrial
-40OC to + 85OC
1.65V ~ 3.6V
VTERM
V
Respect to GND
Temperature Under
Bias
TBIAS
TSTG
PT
-40 to +125
-60 to +150
1.0
OC
OC
W
CAPACITANCE (1) (TA = 25OC, f = 1.0MHz)
Storage Temperature
Power Dissipation
DC Output Current
SYMBOL PAMAMETER CONDITIONS MAX. UNITS
IOUT
20
mA
Input
CIN
CIO
VIN = 0V
VI/O = 0V
6
8
pF
pF
Capacitance
1. Stresses greater than those listed under ABSOLUTE
MAXIMUM RATINGS may cause permanent damage to the
device. This is a stress rating only and functional operation of
the device at these or any other conditions above those
indicated in the operational sections of this specification is not
implied. Exposure to absolute maximum rating conditions for
extended periods may affect reliability.
Input/Output
Capacitance
1. This parameter is guaranteed and not 100% tested.
2. –2.0V in case of AC pulse width less than 30 ns
DC ELECTRICAL CHARACTERISTICS (TA = -40OC to +85OC)
PARAMETER
PARAMETER
TEST CONDITIONS
MIN.
TYP.(1)
MAX.
UNITS
NAME
VCC
Power Supply
1.65
--
3.6
V
0.4
0.6
VCC=1.8V
VCC=3.6V
VCC=1.8V
VCC=3.6V
VIL
VIH
IIL
Input Low Voltage
Input High Voltage
Input Leakage Current
-0.3(2)
--
--
--
V
V
1.4
2.2
V
CC+0.3(3)
V
IN = 0V to VCC,
--
--
--
1
uA
CE1 = VIH or CE2 = VIL
VI/O = 0V to VCC,
ILO
Output Leakage Current
CE1 = VIH or CE2 = VIL or OE = VIH or
UB = LB = VIH
--
1
uA
VCC = Max, IOL = 0.2mA
VCC = Max, IOL = 2.0mA
VCC = Min, IOH = -0.1mA
VCC = Min, IOH = -1.0mA
CE1 = VIL and CE2 = VIH,
0.2
0.4
V
CC=1.8V
VOL
VOH
Output Low Voltage
Output High Voltage
--
--
V
VCC=3.6V
VCC=1.8V
VCC-0.2
2.4
--
V
V
CC=3.6V
6
8
VCC=1.8V
VCC=3.6V
VCC=1.8V
VCC=3.6V
VCC=1.8V
VCC=3.6V
VCC=1.8V
VCC=3.6V
Operating Power Supply
Current
ICC
(4)
--
--
--
--
mA
mA
mA
uA
IDQ = 0mA, f = FMAX
8
12
CE1 = VIL and CE2 = VIH,
IDQ = 0mA, f = 1MHz
1.0
1.5
1.5
2.0
0.5
1.0
12
Operating Power Supply
Current
ICC1
CE1 = VIH, or CE2 = VIL,
IDQ = 0mA
ICCSB
ICCSB1
Standby Current – TTL
--
CE1≧VCC-0.2V or CE2≦0.2V,
V
2.0
2.5(5)
Standby Current – CMOS
IN≧VCC-0.2V or VIN≦0.2V
15
1. Typical characteristics are at TA=25OC and not 100% tested.
2. Undershoot: -1.0V in case of pulse width less than 20 ns.
3. Overshoot: VCC+1.0V in case of pulse width less than 20 ns.
4. FMAX=1/tRC.
5. VCC=3.0V
Revision
Oct.
1.2
2008
R0201-BH616UV8011
3
BSI [ BRILLIANCE SEMICONDUCTOR ]
