BSI
BH616UV8010
n ABSOLUTE MAXIMUM RATINGS (1)
n OPERATING RANGE
AMBIENT
TEMPERATURE
0OC to + 70OC
SYMBOL
PARAMETER
RATING
-0.5(2) to 4.6V
-40 to +125
UNITS
RANG
VCC
Terminal Voltage with
Respect to GND
Temperature Under
Bias
VTERM
V
Commercial
Industrial
1.65V ~ 3.6V
1.65V ~ 3.6V
TBIAS
OC
-25OC to + 85OC
TSTG
PT
Storage Temperature
Power Dissipation
DC Output Current
-60 to +150
OC
W
1.0
20
n CAPACITANCE (1) (TA = 25OC, f = 1.0MHz)
IOUT
mA
SYMBOL PAMAMETER CONDITIONS MAX. UNITS
1. Stresses greater than those listed under ABSOLUTE MAXIMUM
RATINGS may cause permanent damage to the device. This is a
stress rating only and functional operation of the device at these
or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
reliability.
Input
CIN
CIO
VIN = 0V
VI/O = 0V
6
8
pF
pF
Capacitance
Input/Output
Capacitance
1. This parameter is guaranteed and not 100% tested.
2. –2.0V in case of AC pulse width less than 30 ns
n DC ELECTRICAL CHARACTERISTICS (TA = -25OC to +85OC)
PARAMETER
PARAMETER
Power Supply
TEST CONDITIONS
MIN.
TYP.(1)
MAX.
UNITS
NAME
VCC
1.65
--
3.6
V
0.4
0.8
VCC=1.8V
VCC=3.6V
VCC=1.8V
VCC=3.6V
VIL
VIH
IIL
Input Low Voltage
Input High Voltage
Input Leakage Current
-0.3(2)
--
--
--
V
V
1.4
2.0
VCC+0.3(3)
VIN = 0V to VCC
,
--
--
--
1
uA
CE1 = VIH or CE2 = VIL
VI/O = 0V to VCC,
ILO
Output Leakage Current
CE1 = VIH or CE2 = VIL or OE = VIH or
UB = LB = VIH
--
1
uA
VCC = Max, IOL = 0.2mA
0.2
0.4
VCC=1.8V
VOL
VOH
ICC
Output Low Voltage
Output High Voltage
--
--
V
VCC = Max, IOL = 2.0mA
VCC = Min, IOH = -0.1mA
VCC = Min, IOH = -1.0mA
CE1 = VIL and CE2 = VIH,
VCC=3.6V
VCC=1.8V
VCC=3.6V
VCC=1.8V
VCC=3.6V
VCC=1.8V
VCC=3.6V
VCC=1.8V
VCC=3.6V
VCC=1.8V
VCC=3.6V
VCC-0.2
2.4
--
V
4.5
5.0
1.0
1.5
7
Operating Power Supply
Current
(4)
--
--
--
--
mA
mA
mA
uA
IDQ = 0mA, f = FMAX
10
CE1 = VIL and CE2 = VIH,
IDQ = 0mA, f = 1MHz
1.5
2.0
0.5
1.0
12
Operating Power Supply
Current
ICC1
CE1 = VIH, or CE2 = VIL,
IDQ = 0mA
ICCSB
Standby Current – TTL
--
CE1≧VCC-0.2V or CE2≦0.2V,
VIN≧VCC-0.2V or VIN≦0.2V
2.5
2.5
(5)
ICCSB1
Standby Current – CMOS
15
1. Typical characteristics are at TA=25OC.
2. Undershoot: -1.0V in case of pulse width less than 20 ns.
3. Overshoot: VCC+1.0V in case of pulse width less than 20 ns.
4. FMAX=1/tRC.
5. ICCSB1(MAX.) is 10uA/13uA at VCC=1.8V/3.6V and TA=0OC ~ 70OC.
R0201-BH616UV8010
Revision 1.0
Jul. 2005
3
BSI [ BRILLIANCE SEMICONDUCTOR ]
