BH616UV8011
AC ELECTRICAL CHARACTERISTICS (TA = -40OC to +85OC)
WRITE CYCLE
CYCLE TIME : 55ns CYCLE TIME : 70ns
(Vcc=3.0V) (Vcc=1.8V)
MIN. TYP. MAX. MIN. TYP. MAX.
JEDEC
PARANETER
PARAMETER
NAME
DESCRIPTION
Write Cycle Time
UNITS
NAME
tAVAX
tAVWL
tAVWH
tELWH
tBLWH
tWLWH
tWHAX
tE2LAX
tWLQZ
tDVWH
tWHDX
tGHQZ
tWHQX
tWC
tAS
55
0
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
70
0
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Address Set up Time
tAW
Address Valid to End of Write
45
45
45
35
0
--
60
60
60
35
0
--
tCW
tBW
tWP
tWR1
tWR2
tWHZ
tDW
tDH
Chip Select to End of Write
--
--
Data Byte Control to End of Write
(LB, UB)
--
--
Write Pulse Width
--
--
Write Recovery Time
(CE1, WE)
(CE2)
--
--
Write Recovery Time
0
--
0
--
Write to Output High Z
--
20
--
--
25
--
Data to Write Time Overlap
Data Hold from Write Time
Output Disable to Output in High Z
End of Write to Output Active
25
0
30
0
--
--
tOHZ
tOW
--
25
--
--
30
--
5
5
SWITCHING WAVEFORMS (WRITE CYCLE)
WRITE CYCLE 1 (1)
tWC
ADDRESS
OE
(3)
tWR1
(11)
tCW
(5)
(5)
CE1
CE2
(11)
tCW
tBW
(3)
tWR2
LB, UB
tAW
(2)
tWP
WE
tAS
(4,10)
tOHZ
DOUT
tDH
tDW
DIN
Revision
Oct.
1.2
R0201-BH616UV8011
7
2008
BSI [ BRILLIANCE SEMICONDUCTOR ]
