BH616UV8010
n AC ELECTRICAL CHARACTERISTICS (TA = -40OC to +85OC)
READ CYCLE
JEDEC
PARAMETER
NAME
CYCLE TIME : 55ns CYCLE TIME : 70ns
MIN. TYP. MAX. MIN. TYP. MAX.
PARANETER
DESCRIPTION
UNITS
NAME
tAVAX
tAVQX
tE1LQV
tE2LQV
tBLQV
tGLQV
tE1LQX
tE2LQX
tBLQX
tGLQX
tE1HQZ
tE2HQZ
tBHQZ
tGHQZ
tAVQX
tRC
tAA
Read Cycle Time
55
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
55
55
55
55
30
--
70
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
70
70
70
70
35
--
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Address Access Time
Chip Select Access Time
(CE1)
tACS1
tACS2
tBA
--
--
Chip Select Access Time
(CE2)
--
--
Data Byte Control Access Time
(LB, UB)
--
--
tOE
Output Enable to Output Valid
Chip Select to Output Low Z
--
--
(CE1)
(CE2)
tCLZ1
tCLZ2
tBE
10
10
10
5
10
10
10
5
Chip Select to Output Low Z
--
--
Data Byte Control to Output Low Z (LB, UB)
--
--
tOLZ
tCHZ1
tCHZ2
tBDO
tOHZ
tOH
Output Enable to Output Low Z
--
--
Chip Select to Output High Z
Chip Select to Output High Z
(CE1)
(CE2)
--
25
25
25
25
--
--
30
30
30
30
--
--
--
Data Byte Control to Output High Z (LB, UB)
--
--
Output Enable to Output High Z
Data Hold from Address Change
--
--
10
10
n SWITCHING WAVEFORMS (READ CYCLE)
READ CYCLE 1 (1,2,4)
tRC
ADDRESS
tAA
tOH
tOH
DOUT
Revision 1.2
May. 2006
R0201-BH616UV8010
5
BSI [ BRILLIANCE SEMICONDUCTOR ]
