BSI
BS616LV4017
DATA RETENTION CHARACTERISTICS ( TA = -40 to + 85oC )
(1)
SYMBOL
PARAMETER
TEST CONDITIONS
MIN. TYP.
MAX.
UNITS
CE
Vcc - 0.2V
Vcc - 0.2V or V
≧
≧
VDR
Vcc for Data Retention
1.5
--
--
V
IN
IN
V
0.2V
0.2V
≦
≦
(3)
CE
Vcc - 0.2V
Vcc - 0.2V or V
≧
≧
ICCDR
Data Retention Current
--
0
0.3
1.3
uA
IN
IN
V
Chip Deselect to Data
Retention Time
tCDR
tR
--
--
--
--
ns
ns
See Retention Waveform
(2)
Operation Recovery Time
TRC
1. Vcc = 1.5V, TA = + 25OC
2. tRC = Read Cycle Time
3. IccDR_MAX. is 0.8uA at TA=70OC.
LOW VCC DATA RETENTION WAVEFORM ( CE Controlled )
Data Retention Mode
V
DR ≥ 1.5V
Vcc
Vcc
Vcc
CE
t
R
t
CDR
≥
CE Vcc - 0.2V
VIH
VIH
Revision 2.1
R0201-BS616LV4017
4
Jan.
2004
BSI [ BRILLIANCE SEMICONDUCTOR ]
