BSI
BS616LV4017
OPERATING RANGE
ABSOLUTE MAXIMUM RATINGS(1)
AMBIENT
TEMPERATURE
SYMBOL
VTERM
TBIAS
TSTG
PARAMETER
RATING
UNITS
V
RANGE
Vcc
Terminal Voltage with
Respect to GND
-0.5 to
Vcc+0.5
Commercial
Industrial
0 O C to +70 O C
2.4V ~ 5.5V
2.4V ~ 5.5V
Temperature Under Bias
Storage Temperature
Power Dissipation
-40 to +85
-60 to +150
1.0
O C
-40 O C to +85 O C
O C
W
PT
CAPACITANCE (1) (TA = 25oC, f = 1.0 MHz)
DC Output Current
20
mA
IOUT
SYMBOL
PARAMETER CONDITIONS MAX.
UNIT
1. Stresses greater than those listed under ABSOLUTE MAXIMUM
RATINGS may cause permanent damage to the device. This is a
stress rating only and functional operation of the device at these
or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
reliability.
Input
CIN
VIN=0V
=0V
6
8
pF
Capacitance
Input/Output
Capacitance
DQ
C
I/O
V
pF
1. This parameter is guaranteed and not 100% tested.
DC ELECTRICAL CHARACTERISTICS ( TA = -40 to + 85oC )
PARAMETER
MIN. TYP.(1) MAX.
UNITS
PARAMETER
TEST CONDITIONS
NAME
Vcc=3.0V
Vcc=5.0V
Vcc=3.0V
Vcc=5.0V
0.8
--
Guaranteed Input Low
Voltage(2)
VIL
-0.5
V
0.8
2.0
2.2
--
Guaranteed Input High
Voltage(2)
--
IH
V
V
Vcc+0.3
IN
IIL
Input Leakage Current Vcc = Max, V = 0V to Vcc
--
--
1
1
uA
uA
IH
Vcc = Max, CE = V IH , or OE,= V
ILO
--
--
Output Leakage Current
Output Low Voltage
V
I/O = 0V to Vcc
Vcc=3.0V
Vcc=5.0V
Vcc=3.0V
Vcc=5.0V
Vcc=3.0V
Vcc=5.0V
0.4
0.4
V
V
--
--
--
OL
VOL
VOH
Vcc = Max, I = 2.0mA
2.4
2.4
Output High Voltage
Vcc = Min, IOH = -1.0mA
--
(5)
CE=VIL ,IDQ= 0mA,
F=Fmax(3)
70ns
70ns
22
55
Operating Power
Supply Current
ICC
mA
mA
uA
--
Vcc=3.0V
0.5
1.0
10
ICCSB
IH
DQ
--
CE = V , I = 0mA
--
--
Standby Current-TTL
Vcc=5.0V
Vcc=3.0V
Vcc=5.0V
(4)
0.45
2.0
CE Vcc-0.2V,
≧
Standby Current-CMOS
ICCSB1
V
IN
Vcc - 0.2V or VIN 0.2V
≦
≧
60
1. Typical characteristics are at TA = 25oC.
2. These are absolute values with respect to device ground and all overshoots due to system or tester notice are included.
3. Fmax = 1/tRC
.
4. IccSB1_MAX. is 5uA/30uA at Vcc=3.0V/5.0V and TA=70oC.
5. Icc_MAX. is 27mA(@3.0V)/65mA(@5.0V) under 55ns operation.
Revision 2.1
R0201-BS616LV4017
3
Jan.
2004
BSI [ BRILLIANCE SEMICONDUCTOR ]
