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ADS7805UB/1K 参数 Datasheet PDF下载

ADS7805UB/1K图片预览
型号: ADS7805UB/1K
PDF下载: 下载PDF文件 查看货源
内容描述: [ADC, Successive Approximation, 16-Bit, 1 Func, 1 Channel, Parallel, Word Access, CMOS, PDSO28, GREEN, PLASTIC, SOIC-28]
分类和应用: 光电二极管转换器
文件页数/大小: 20 页 / 586 K
品牌: BB [ BURR-BROWN CORPORATION ]
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ABSOLUTE MAXIMUM RATINGS(1)  
ELECTROSTATIC  
DISCHARGE SENSITIVITY  
This integrated circuit can be damaged by ESD. Texas Instru-  
ments recommends that all integrated circuits be handled with  
appropriate precautions. Failure to observe proper handling  
and installation procedures can cause damage.  
Analog Inputs: VIN ............................................................................. ±25V  
REF.................................................. +VANA + 0.3V to AGND2 0.3V  
CAP ..................Indifinite Short to AGND2 Momentary Short to VANA  
Ground Voltage Differences: DGND, AGND1, AGND2 ................... ±0.3V  
VANA ....................................................................................................... 7V  
V
V
DIG to VANA ...................................................................................... +0.3V  
DIG ........................................................................................................ 7V  
Digital Inputs .......................................................... 0.3V to +VDIG + 0.3V  
Maximum Junction Temperature ................................................... +165°C  
Internal Power Dissipation............................................................. 825mW  
Lead Temperature (soldering, 10s)............................................... +300°C  
ESD damage can range from subtle performance degradation  
to complete device failure. Precision integrated circuits may be  
more susceptible to damage because very small parametric  
changes could cause the device not to meet its published  
specifications.  
NOTE: (1) Stresses above those listed under Absolute Maximum Ratings may  
cause permanent damage to the device. Exposure to absolute maximum  
conditions for extended periods may affect device reliability.  
PACKAGE/ORDERING INFORMATION(1)  
MINIMUM  
MAXIMUM  
LINEARITY  
ERROR  
SIGNAL-TO-  
(NOISE +  
DISTORTION)  
RATIO (dB)  
SPECIFIED  
TEMPERATURE  
RANGE  
PACKAGE  
DESIGNATOR  
PACKAGE  
MARKING  
ORDERING  
NUMBER  
TRANSPORT  
MEDIA, QUANTITY  
PRODUCT  
(LSB)  
PACKAGE-LEAD  
ADS7805P  
ADS7805PB  
ADS7805U  
ADS7805U  
ADS7805UB  
ADS7805UB  
±4  
±3  
±4  
±4  
±3  
±3  
83  
86  
83  
83  
86  
86  
DIP-28  
DIP-28  
SO-28  
SO-28  
SO-28  
SO-28  
NT  
NT  
25°C to +85°C  
25°C to +85°C  
25°C to +85°C  
25°C to +85°C  
25°C to +85°C  
25°C to +85°C  
NT  
NT  
ADS7805P  
ADS7805PB  
ADS7805U  
Tube, 13  
Tube, 13  
DW  
DW  
DW  
DW  
DW  
DW  
DW  
DW  
Tube, 28  
ADS7805U/1K  
ADS7805UB  
ADS7805UB/1K  
Tape and Reel, 1000  
Tube, 28  
Tape and Reel, 1000  
NOTE: (1) For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI website at www.ti.com.  
ELECTRICAL CHARACTERISTICS  
TA = 25°C to +85°C, fS = 100kHz, VDIG = VANA = +5V, using internal reference, unless otherwise specified.  
ADS7805P, U  
TYP  
ADS7805PB, UB  
TYP  
PARAMETER  
RESOLUTION  
CONDITIONS  
MIN  
MAX  
MIN  
MAX  
UNITS  
16  
16  
Bits  
ANALOG INPUT  
Voltage Ranges  
Impedance  
±10  
23  
35  
±10  
23  
35  
V
kΩ  
pF  
Capacitance  
THROUGHPUT SPEED  
Conversion Cycle  
Acquire and Convert  
10  
10  
µs  
Throughput Rate  
100  
15  
100  
16  
kHz  
DC ACCURACY  
Integral Linearity Error  
No Missing Codes  
Transition Noise(2)  
±4  
±3  
LSB(1)  
Bits  
LSB  
%
ppm/°C  
%
ppm/°C  
mV  
ppm/°C  
LSB  
1.3  
±7  
±2  
±2  
1.3  
±5  
±2  
±2  
Full-Scale Error(3,4)  
Full-Scale Error Drift  
Full-Scale Error(3,4)  
Full-Scale Error Drift  
Bipolar Zero Error(3)  
Bipolar Zero Error Drift  
Power Supply Sensitivity  
(VDIG = VANA = VD)  
±0.5  
±0.5  
±10  
±8  
±0.25  
±0.25  
±10  
Ext. 2.5000V Ref  
Ext. 2.5000V Ref  
+4.75V < VD < +5.25V  
±8  
AC ACCURACY  
Spurious-Free Dynamic Range  
Total Harmonic Distortion  
Signal-to-(Noise+Distortion)  
f
IN = 20kHz  
fIN = 20kHz  
IN = 20kHz  
60dB Input  
90  
83  
83  
94  
86  
86  
dB(5)  
dB  
dB  
dB  
dB  
90  
94  
f
30  
32  
Signal-to-Noise  
Full-Power Bandwidth(6)  
f
IN = 20kHz  
250  
250  
kHz  
SAMPLING DYNAMICS  
Aperture Delay  
Transient Response  
Overvoltage Recovery(7)  
40  
40  
ns  
µs  
ns  
FS Step  
2
2
150  
150  
ADS7805  
2
SBAS020D  
www.ti.com