SRAM
AS5C1008
Austin Semiconductor, Inc.
ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS
(-55oC<TA<+125oC or -40oC to +85oC;Vcc = 5V+10%)
-15
-20
-25
SYMBOL1
DESCRIPTION
READ CYCLE
MIN MAX MIN MAX MIN MAX UNIT
Read Cycle Time
15
20
25
ns
ns
ns
ns
ns
ns
ns
ns
ns
tRC
tAA
tACE
tOH
Address Access Time
15
15
20
20
25
25
Chip Enable Access Time
Output Hold from Address Change
Chip Enable to Output in Low-Z
Chip Disable to Output in High-Z
Output Enable Access Time
Output Enable to Output in Low-Z
3
3
3
3
3
3
tLZCE
tHZCE
tAOE
tLZOE
tHZOE
7
7
8
7
10
10
0
0
0
Output Disable to Output in High-Z
WRITE CYCLE
7
8
10
Write Cycle Time
15
12
12
0
20
15
15
0
25
20
20
0
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
tWC
tCW
tAW
Chip Enable to End of Write
Address Valid to End of Write
Address Set-up Time
tAS
Address Hold from End of Write
Write Pulse Width (OE\ > VIH)
Data Set-up Time
0
0
0
tAH
12
8
15
10
0
20
15
0
tWP
tDS
Data Hold Time
0
tDH
Write Disable to Output in Low-Z
Write Enable to Output in High-Z
5
5
5
tLZWE
tHZWE
7
9
10
NOTE: 1. tLZCE, tLZWE, tHZCE, tLZOE, and tHZOEare simulated values.
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
AS5C1008
Rev. 3.5 1/01
4
AUSTIN [ AUSTIN SEMICONDUCTOR ]
