EEPROM
AS58C1001
Austin Semiconductor, Inc.
AC ELECTRICAL CHARACTERISTICS FOR BYTE ERASE AND BYTE
WRITE OPERATIONS
PARAMETER
SYMBOL
UNITS
MIN
MAX
Address Setup Time
tAS
0
---
ns
7
Chip Enable to Write Setup Time
tCS
0
---
---
ns
ns
8
tCW
250
Write Pulse Width
7
tWP
250
150
100
10
---
---
---
---
ns
ns
ns
ns
Address Hold Time
tAH
tDS
tDH
Data Setup Time
Data Hold Time
7
Chip Enable Hold Time
Out Enable to Write Setup Time
Output Enable Hold Time
Write Cycle Time
tCH
0
0
---
---
---
---
---
---
---
ns
ns
ns
ms
µs
tOES
tOEH
tWC
tBL
0
10
100
120
100
Byte Load Window
Time to Device Busy
RES\ to Write Setup Time
Vcc to RES\ Setup Time
tDB
ns
µs
tRP
10
µs
tRES
1
---
NOTES:
1. Relative to Vss
AC TEST CONDITIONS
Input Pulse Levels............................................0V to 3V
Input Rise and Fall Times....................................<20ns
Input Timing Reference Level................................1.5V
Output Reference Level..........................................1.5V
Output Load................................................See Figure 1
2. VIN min = -3.0V for pulse widths <50ns
3. VIL min = -1.0V for pulse widths <50ns
4. IIL on RES\ = 100ua MAX
5. tOF is defined as the time at which E the output becomes and
open circuit and data is no longer driven.
6. Use this device in longer cycle than this value
7. WE\ controlled operation
8. CE\ controlled operation
Q
9. RES\ pin VIH is VH
10. Reference only, not tested
100pF
1 TTL GATE EQ.
Figure 1
OUTPUT LOAD EQUIVALENT
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
AS58C1001
Rev. 4.0 3/01
8
AUSTIN [ AUSTIN SEMICONDUCTOR ]
